dc.contributor.author | Nesse, Torstein | |
dc.contributor.author | Simonsen, Ingve | |
dc.contributor.author | Holst, Bodil | |
dc.date.accessioned | 2020-02-07T07:04:52Z | |
dc.date.available | 2020-02-07T07:04:52Z | |
dc.date.created | 2019-04-11T15:04:03Z | |
dc.date.issued | 2019 | |
dc.identifier.citation | Physical Review Applied. 2019, 11 (2), . | nb_NO |
dc.identifier.issn | 2331-7019 | |
dc.identifier.uri | http://hdl.handle.net/11250/2640129 | |
dc.description.abstract | Mask-based pattern generation is a crucial step in microchip production. The next-generation extreme-ultraviolet- (EUV) lithography instruments with a wavelength of 13.5 nm are currently under development. In principle, this should allow patterning down to a resolution of a few nanometers in a single exposure. However, there are many technical challenges, including those due to the very high energy of the photons. Lithography with metastable atoms has been suggested as a cost-effective, less-complex alternative to EUV lithography. The great advantage of atom lithography is that the kinetic energy of an atom is much less than that of a photon for a given wavelength. However, until now no method has been available for making masks for atom lithography that can produce arbitrary, high-resolution patterns. Here we present a solution to this problem. First, traditional binary holography is extended to near-field binary holography, based on Fresnel diffraction. By this technique, we demonstrate that it is possible to make masks that can generate arbitrary patterns in a plane in the near field (from the mask) with a resolution down to the nanometer range using a state-of-the-art metastable-helium source. We compare the flux of this source with that of an established EUV source (NXE:3100, ASML) and show that patterns can potentially be produced at comparable speeds. Finally, we present an extension of the grid-based holography method for a grid of hexagonally shaped subcells. Our method can be used with any beam that can be modeled as a scalar wave, including other matter-wave beams such as helium ions, electrons, or acoustic waves. | nb_NO |
dc.language.iso | eng | nb_NO |
dc.publisher | American Physical Society | nb_NO |
dc.title | Nanometer-Resolution Mask Lithography with Matter Waves: Near-Field Binary Holography | nb_NO |
dc.type | Journal article | nb_NO |
dc.type | Peer reviewed | nb_NO |
dc.description.version | acceptedVersion | nb_NO |
dc.source.pagenumber | 11 | nb_NO |
dc.source.volume | 11 | nb_NO |
dc.source.journal | Physical Review Applied | nb_NO |
dc.source.issue | 2 | nb_NO |
dc.identifier.doi | 10.1103/PhysRevApplied.11.024009 | |
dc.identifier.cristin | 1691750 | |
dc.relation.project | Norges forskningsråd: 216699 | nb_NO |
dc.relation.project | Norges forskningsråd: 213453 | nb_NO |
dc.relation.project | Norges forskningsråd: 234159 | nb_NO |
dc.description.localcode | © American Physical Society 2019. This is the authors accepted and refereed manuscript to the article. | nb_NO |
cristin.unitcode | 194,66,20,0 | |
cristin.unitname | Institutt for fysikk | |
cristin.ispublished | true | |
cristin.fulltext | postprint | |
cristin.qualitycode | 1 | |