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dc.contributor.authorBang, Ambjørn Dahle
dc.contributor.authorHallsteinsen, Ingrid
dc.contributor.authorOlsen, Fredrik Kjemperud
dc.contributor.authorSlöetjes, Samuel Dingeman
dc.contributor.authorRetterer, Scott T
dc.contributor.authorScholl, Andreas
dc.contributor.authorArenholz, Elke
dc.contributor.authorFolven, Erik
dc.contributor.authorGrepstad, Jostein
dc.date.accessioned2020-02-05T09:08:41Z
dc.date.available2020-02-05T09:08:41Z
dc.date.created2019-09-20T14:04:39Z
dc.date.issued2019
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/11250/2639709
dc.description.abstractIn this study, we report on a temperature-driven antiferromagnetic (AF) spin reorientation transition in micro- and nanostructures of AF/ferromagnetic (FM) LaFeO3/La0.7Sr0.3MnO3 thin film bilayers. Using a combination of x-ray photoemission electron microscopy and x-ray absorption spectroscopy, the Néel vector is shown to reorient 90° as a result of the competition between a shape-imposed anisotropy in the AF layer and interface coupling to the adjacent FM layer. We demonstrate how a temperature dependence of the AF/FM spin configuration in line-shaped nanomagnets can be tuned by variation of their linewidth. This work provides insight into the AF/FM interface exchange coupling in complex oxide heterostructures and the possibilities of spin control by nanostructuring in thin film spintronics.nb_NO
dc.language.isoengnb_NO
dc.publisherAIP Publishingnb_NO
dc.titleNeel vector reorientation in ferromagnetic/antiferromagnetic complex oxide nanostructuresnb_NO
dc.typeJournal articlenb_NO
dc.typePeer reviewednb_NO
dc.description.versionacceptedVersionnb_NO
dc.source.volume114nb_NO
dc.source.journalApplied Physics Lettersnb_NO
dc.source.issue19nb_NO
dc.identifier.doi10.1063/1.5094604
dc.identifier.cristin1727249
dc.relation.projectNorges forskningsråd: 245963nb_NO
dc.relation.projectNorges forskningsråd: 221860/F60nb_NO
dc.relation.projectNorges forskningsråd: 231290nb_NO
dc.description.localcodeThis is the authors’ accepted and refereed manuscript to the article. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in (citation of published article) and may be found at https://doi.org/10.1063/1.5094604nb_NO
cristin.unitcode194,63,35,0
cristin.unitnameInstitutt for elektroniske systemer
cristin.ispublishedtrue
cristin.fulltextpostprint
cristin.qualitycode2


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