A loadless 6T SRAM cell for sub- & near- threshold operation implementedin 28 nm FD-SOI CMOS technology
Journal article, Peer reviewed
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Original versionIntegration. 2018, 63 56-63. 10.1016/j.vlsi.2018.05.006
Most ultra low power SRAM cells operating in the sub and near threshold region deploy 8 or more transistors per storage cell to ensure stability. In this paper we propose and design a low voltage, differential write, single ended read memory cell that consists of a total of 6 transistors. The innovative idea is to bring the loadless 4-transistor latch into the realm of low voltage memory cells by exploiting features of the 28 nm FDSOI Process and by adding a 2-transistor readbuffer with a footer line. Stand-alone and on a system level, the cell is stable during read, write and hold operations and it has great write-ability due to its differential write and loadless nature. The single NWELL option in 28 nm FD-SOI allows the loadless core to have minimal device widths while greatly improving the time it takes to evaluate the read bit-line. The cell has, in this paper, been used in a 128 kb (2 17 ) SRAM in a 16 block configuration exploring 3 different types of logic libraries for the peripheral logic of the system. Depending on the application, the IO-peripheral logic may be implemented using either high threshold voltage transistors or low threshold voltage transistors in where the power consumption of the 128 kb system was found to range from 1.31 µW to 71.09 µW, the maximum operational frequency lies within 1.87 MHz and 14.97 MHz while the read energy varies from 13.08 to 75.21 fJ/operation/bit for a supply voltage of 350 mV. The minimum retention voltage of the loadless SRAM cell is found to be 230 mV covering 5σof variation with Monte Carlo simulations.