dc.contributor.author | Göthner, Fredrik T. B. W. | |
dc.contributor.author | Spro, Ole Christian | |
dc.contributor.author | Hernes, Magnar | |
dc.contributor.author | Peftitsis, Dimosthenis | |
dc.date.accessioned | 2019-02-25T08:35:12Z | |
dc.date.available | 2019-02-25T08:35:12Z | |
dc.date.created | 2018-12-04T09:47:07Z | |
dc.date.issued | 2018 | |
dc.identifier.isbn | 978-9-0758-1528-3 | |
dc.identifier.uri | http://hdl.handle.net/11250/2587123 | |
dc.description.abstract | This paper investigates the power cycling methodology for reliability testing of SiC metal-oxide-semiconductor field-effect transistors (MOSFETs). Dedicated test benches were designed and built to study this issue. The results indicate that power cycling of SiC MOSFETs is affected by threshold voltage instability. A proposal for reducing the influence of the latter is also given. This is done by adding an additional gate pulse to the device under test, in order to achieve an average bias of zero during one cycle of the power cycling experiment. | nb_NO |
dc.language.iso | eng | nb_NO |
dc.publisher | Institute of Electrical and Electronics Engineers (IEEE) | nb_NO |
dc.relation.ispartof | 20th European Conference on Power Electronics and Applications 2018 | |
dc.title | Challenges of SiC MOSFET Power Cycling Methodology | nb_NO |
dc.type | Chapter | nb_NO |
dc.description.version | submittedVersion | nb_NO |
dc.identifier.cristin | 1638774 | |
dc.description.localcode | © 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. | nb_NO |
cristin.unitcode | 194,63,20,0 | |
cristin.unitname | Institutt for elkraftteknikk | |
cristin.ispublished | true | |
cristin.fulltext | preprint | |
cristin.qualitycode | 1 | |