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dc.contributor.authorSlöetjes, Samuel Dingeman
dc.contributor.authorDigernes, Einar
dc.contributor.authorOlsen, Fredrik Kjemperud
dc.contributor.authorChopdekar, Rajesh V.
dc.contributor.authorRetterer, Scott T.
dc.contributor.authorFolven, Erik
dc.contributor.authorGrepstad, Jostein
dc.date.accessioned2019-02-12T09:23:32Z
dc.date.available2019-02-12T09:23:32Z
dc.date.created2018-09-20T11:28:22Z
dc.date.issued2018
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/11250/2584953
dc.description.abstractA field-driven transformation of a domain pattern in a square micromagnet, defined in a thin film of La0.7Sr0.3MnO3, is discussed in terms of creation and annihilation of bulk vortices and edge-bound topological defects with half-integer winding numbers. The evolution of the domain pattern was mapped with soft x-ray photoemission electron microscopy and magnetic force microscopy. Micromagnetic modeling, permitting detailed analysis of the spin texture, accurately reproduces the measured domain state transformation. The simulations also helped stipulate the energy barriers associated with the creation and annihilation of the topological charges and thus to assess the stability of the domain states in this magnetic microstructure.nb_NO
dc.language.isoengnb_NO
dc.publisherAIP Publishingnb_NO
dc.rightsNavngivelse 4.0 Internasjonal*
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/deed.no*
dc.titleInterplay between bulk and edge-bound topological defects in a square micromagnetnb_NO
dc.title.alternativeInterplay between bulk and edge-bound topological defects in a square micromagnetnb_NO
dc.typeJournal articlenb_NO
dc.typePeer reviewednb_NO
dc.description.versionpublishedVersionnb_NO
dc.source.volume112nb_NO
dc.source.journalApplied Physics Lettersnb_NO
dc.identifier.doi10.1063/1.5010166
dc.identifier.cristin1611385
dc.description.localcode(C) 2018 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license.nb_NO
cristin.unitcode194,63,35,0
cristin.unitnameInstitutt for elektroniske systemer
cristin.ispublishedtrue
cristin.fulltextoriginal
cristin.qualitycode2


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