dc.contributor.author | Høiaas, Ida Marie | |
dc.contributor.author | KIM, DONG CHUL | |
dc.contributor.author | Weman, Helge | |
dc.date.accessioned | 2019-01-21T09:56:42Z | |
dc.date.available | 2019-01-21T09:56:42Z | |
dc.date.created | 2016-04-20T20:16:49Z | |
dc.date.issued | 2016 | |
dc.identifier.issn | 0003-6951 | |
dc.identifier.uri | http://hdl.handle.net/11250/2581446 | |
dc.description.abstract | We report the fabrication of a Si(111) crystalline thin film on graphene by the aluminum-induced crystallization (AIC) process. The AIC process of Si(111) on graphene is shown to be enhanced compared to that on an amorphous SiO2 substrate, resulting in a more homogeneous Si(111) thin film structure as revealed by X-ray diffraction and atomic force microscopy measurements. Raman measurements confirm that the graphene is intact throughout the process, retaining its characteristic phonon spectrum without any appearance of the D peak. A red-shift of Raman peaks, which is more pronounced for the 2D peak, is observed in graphene after the crystallization process. It is found to correlate with the red-shift of the Si Raman peak, suggesting an epitaxial relationship between graphene and the adsorbed AIC Si(111) film with both the graphene and Si under tensile strain. | nb_NO |
dc.language.iso | eng | nb_NO |
dc.publisher | AIP Publishing | nb_NO |
dc.rights | Navngivelse 4.0 Internasjonal | * |
dc.rights.uri | http://creativecommons.org/licenses/by/4.0/deed.no | * |
dc.title | Fabrication of Si(111) crystalline thin film on graphene by aluminum-induced crystallization | nb_NO |
dc.type | Journal article | nb_NO |
dc.type | Peer reviewed | nb_NO |
dc.description.version | publishedVersion | nb_NO |
dc.source.volume | 108 | nb_NO |
dc.source.journal | Applied Physics Letters | nb_NO |
dc.identifier.doi | 10.1063/1.4947101 | |
dc.identifier.cristin | 1351609 | |
dc.relation.project | Norges forskningsråd: 221860 | nb_NO |
dc.relation.project | Norges forskningsråd: 239206 | nb_NO |
dc.relation.project | Norges forskningsråd: 214235 | nb_NO |
dc.description.localcode | (C) 2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license. | nb_NO |
cristin.unitcode | 194,63,35,0 | |
cristin.unitname | Institutt for elektroniske systemer | |
cristin.ispublished | true | |
cristin.fulltext | original | |
cristin.qualitycode | 2 | |