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dc.contributor.authorPolkowski, Wojciech
dc.contributor.authorSobczak, Natalia
dc.contributor.authorNowak, Rafal
dc.contributor.authorKudyba, Artur
dc.contributor.authorBruzda, Grzegorz
dc.contributor.authorPolkowska, Adelajda
dc.contributor.authorHoma, Marta
dc.contributor.authorTuralska, Patrycja
dc.contributor.authorTangstad, Merete
dc.contributor.authorSafarian, Jafar
dc.contributor.authorMoosavi-Khoonsari, Elmira
dc.contributor.authorDatas, Alejandro
dc.identifier.citationJournal of materials engineering and performance. 2017.nb_NO
dc.description.abstractFor a successful implementation of newly proposed silicon-based latent heat thermal energy storage systems, proper ceramic materials that could withstand a contact heating with molten silicon at temperatures much higher than its melting point need to be developed. In this regard, a non-wetting behavior and low reactivity are the main criteria determining the applicability of ceramic as a potential crucible material for long-term ultrahigh temperature contact with molten silicon. In this work, the wetting of hexagonal boron nitride (h-BN) by molten silicon was examined for the first time at temperatures up to 1750 °C. For this purpose, the sessile drop technique combined with contact heating procedure under static argon was used. The reactivity in Si/h-BN system under proposed conditions was evaluated by SEM/EDS examinations of the solidified couple. It was demonstrated that increase in temperature improves wetting, and consequently, non-wetting-to-wetting transition takes place at around 1650 °C. The contact angle of 90° ± 5° is maintained at temperatures up to 1750 °C. The results of structural characterization supported by a thermodynamic modeling indicate that the wetting behavior of the Si/h-BN couple during heating to and cooling from ultrahigh temperature of 1750 °C is mainly controlled by the substrate dissolution/reprecipitation mechanism.nb_NO
dc.rightsNavngivelse 4.0 Internasjonal*
dc.titleWetting Behavior and Reactivity of Molten Silicon with h-BN Substrate at Ultrahigh Temperatures up to 1750 °Cnb_NO
dc.typeJournal articlenb_NO
dc.typePeer reviewednb_NO
dc.source.journalJournal of materials engineering and performance (Print)nb_NO
dc.description.localcode© The Author(s) 2017 Open Access This article is distributed under the terms of the Creative Commons Attribution 4.0 International License (, which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.nb_NO
cristin.unitnameInstitutt for materialteknologi

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