dc.contributor.author | Mundy, Julia | |
dc.contributor.author | Schaab, Jakob | |
dc.contributor.author | Kumagai, Yu | |
dc.contributor.author | Cano, Andres | |
dc.contributor.author | Stengel, Massimiliano | |
dc.contributor.author | Krug, Ingo P. | |
dc.contributor.author | Gottlob, Daniel G. | |
dc.contributor.author | Doganay, Hattice | |
dc.contributor.author | Holtz, Megan, E. | |
dc.contributor.author | Held, Rainer | |
dc.contributor.author | Yan, Zewu | |
dc.contributor.author | Bourret, Edith | |
dc.contributor.author | Schneider, Claus M. | |
dc.contributor.author | Schlom, Darrel G. | |
dc.contributor.author | Muller, David A. | |
dc.contributor.author | Ramesh, Ramamoorthy | |
dc.contributor.author | Spaldin, Nicola A. | |
dc.contributor.author | Meier, Dennis Gerhard | |
dc.date.accessioned | 2018-01-03T11:18:19Z | |
dc.date.available | 2018-01-03T11:18:19Z | |
dc.date.created | 2017-03-27T09:05:49Z | |
dc.date.issued | 2017 | |
dc.identifier.issn | 1476-1122 | |
dc.identifier.uri | http://hdl.handle.net/11250/2474312 | |
dc.description.abstract | Ferroelectric domain walls hold great promise as functional two-dimensional materials because of their unusual electronic properties. Particularly intriguing are the so-called charged walls where a polarity mismatch causes local, diverging electrostatic potentials requiring charge compensation and hence a change in the electronic structure. These walls can exhibit significantly enhanced conductivity and serve as a circuit path. The development of all-domain-wall devices, however, also requires walls with controllable output to emulate electronic nano-components such as diodes and transistors. Here we demonstrate electric-field control of the electronic transport at ferroelectric domain walls. We reversibly switch from resistive to conductive behaviour at charged walls in semiconducting ErMnO3 . We relate the transition to the formation—and eventual activation—of an inversion layer that acts as the channel for the charge transport. The findings provide new insight into the domain-wall physics in ferroelectrics and foreshadow the possibility to design elementary digital devices for all-domain-wall circuitry. | nb_NO |
dc.language.iso | eng | nb_NO |
dc.publisher | Nature Publishing Group | nb_NO |
dc.title | Functional electronic inversion layers at ferroelectric domain walls | nb_NO |
dc.type | Journal article | nb_NO |
dc.type | Peer reviewed | nb_NO |
dc.description.version | acceptedVersion | nb_NO |
dc.source.pagenumber | 622–627 | nb_NO |
dc.source.volume | 16 | nb_NO |
dc.source.journal | Nature Materials | nb_NO |
dc.identifier.doi | 10.1038/NMAT4878 | |
dc.identifier.cristin | 1461218 | |
dc.description.localcode | © 2017. This is the authors' accepted and refereed manuscript to the article. The final authenticated version is available online at: https://www.nature.com/articles/nmat4878#abstract | nb_NO |
cristin.unitcode | 194,66,35,0 | |
cristin.unitname | Institutt for materialteknologi | |
cristin.ispublished | true | |
cristin.fulltext | postprint | |
cristin.qualitycode | 2 | |