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Quantitative (S)TEM analysis of intermediate band solar cell materials

Nord, Magnus Kristofer
Master thesis
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http://hdl.handle.net/11250/246515
Utgivelsesdato
2011
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  • Institutt for fysikk [2156]
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In this thesis the strain properties of two InAs/GaAs quantum dot intermediate band solar cell materials have been explored. Both samples were thin films grown on a (100) GaAs substrate. The quantum dot material was InAs, and the bulk material was GaAs. One sample had AlAs-cap, while the other had GaAs-cap. Geometrical phase analysis was used to study the strain. A higher degree of strain was found in the AlAs-capped sample. Negative strain was observed in directly above and below the quantum dots in both samples. A stacking fault in a quantum dot in the AlAs-capped sample was found to relax all the strain. Analysis of the chemical composition of the AlAs-capped sample was performed using HAADF-STEM and multislice analysis. This analysis found an average indium concentration inside the quantum dots of 25% +- 10%, with peaks up to 50%.
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