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dc.contributor.advisorReenaas, Turid Worrennb_NO
dc.contributor.authorHanif, Muhammadnb_NO
dc.date.accessioned2014-12-19T13:16:49Z
dc.date.available2014-12-19T13:16:49Z
dc.date.created2011-06-29nb_NO
dc.date.issued2011nb_NO
dc.identifier427889nb_NO
dc.identifierntnudaim:6469nb_NO
dc.identifier.urihttp://hdl.handle.net/11250/246444
dc.description.abstractGermanium quantum dots in a silicon matrix can be used in so-called intermediate band solar cells. Such solar cells have efficiency limits exceeding that of the conventional single junction solar cells. In this master project germanium quantum dots will be fabricated on silicon substrates using electron beam (e-beam) deposition in NTNU Nanolab. A systematic study will be performed, where the substrate temperature during deposition and the amount of material deposited will be varied. Both germanium and silicon samples will be fabricated. The structural properties of the samples will be studied using scanning electron microscopy, atomic force microscopy and X-ray diffraction, and the composition of the samples will studied by X-ray photoelectron spectroscopy and Auger electron spectroscopy. The thickness of the films will be studied using a profilometer. Finally, the density of quantum dots and their size distribution will be determined using atomic force microscopy.nb_NO
dc.languageengnb_NO
dc.publisherInstitutt for fysikknb_NO
dc.subjectntnudaim:6469no_NO
dc.subjectMSCONDMAT Condensed Matter Physicsno_NO
dc.subjectno_NO
dc.titleGrowth and Characterization of Germanium Quantum Dots and Crystalline Siliconnb_NO
dc.typeMaster thesisnb_NO
dc.source.pagenumber112nb_NO
dc.contributor.departmentNorges teknisk-naturvitenskapelige universitet, Fakultet for naturvitenskap og teknologi, Institutt for fysikknb_NO


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