Growth and Characterization of Germanium Quantum Dots and Crystalline Silicon
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- Institutt for fysikk 
Germanium quantum dots in a silicon matrix can be used in so-called intermediate band solar cells. Such solar cells have efficiency limits exceeding that of the conventional single junction solar cells. In this master project germanium quantum dots will be fabricated on silicon substrates using electron beam (e-beam) deposition in NTNU Nanolab. A systematic study will be performed, where the substrate temperature during deposition and the amount of material deposited will be varied. Both germanium and silicon samples will be fabricated. The structural properties of the samples will be studied using scanning electron microscopy, atomic force microscopy and X-ray diffraction, and the composition of the samples will studied by X-ray photoelectron spectroscopy and Auger electron spectroscopy. The thickness of the films will be studied using a profilometer. Finally, the density of quantum dots and their size distribution will be determined using atomic force microscopy.