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dc.contributor.authorKok, Angela
dc.contributor.authorHansen, Thor-Erik
dc.contributor.authorHansen, Trond Andreas
dc.contributor.authorJensen, Geir Uri
dc.contributor.authorLietaer, Nicolas
dc.contributor.authorMielnik, Michal Marek
dc.contributor.authorStorås, Preben
dc.date.accessioned2017-07-10T10:48:13Z
dc.date.available2017-07-10T10:48:13Z
dc.date.created2012-11-23T15:18:31Z
dc.date.issued2009
dc.identifier.citationIEEE Nuclear Science Symposium Conference Record. 2009, 1623-1627.nb_NO
dc.identifier.issn1082-3654
dc.identifier.urihttp://hdl.handle.net/11250/2448306
dc.description.abstract3D detectors with electrodes penetrating through the entire silicon substrate have many advantages over conventional planar silicon technology, for example, high radiation tolerance. High aspect ratio through-wafer holes are essential in such fabrication, and deep reactive ion etching (DRIE) is used. A series of DRIE processes were tested and optimised to achieve the required aspect ratio, and in 5-μm wide trenches, aspect ratios of 58:1 were achievednb_NO
dc.language.isoengnb_NO
dc.publisherIEEEnb_NO
dc.subjectRaidation tolerancenb_NO
dc.subjectDeep reactive ion etchingnb_NO
dc.subjectHigh aspect rationb_NO
dc.subject3D detectorsnb_NO
dc.titleHigh aspect ratio deep RIE for novel 3D radiation sensors in high energy physics applicationsnb_NO
dc.typeJournal articlenb_NO
dc.typePeer reviewednb_NO
dc.description.versionacceptedVersion
dc.source.pagenumber1623-1627nb_NO
dc.source.journalIEEE Nuclear Science Symposium Conference Recordnb_NO
dc.identifier.doi10.1109/NSSMIC.2009.5402256
dc.identifier.cristin964556
dc.description.localcode© 2009 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other worksnb_NO
cristin.unitcode194,64,25,0
cristin.unitnameInstitutt for energi- og prosessteknikk
cristin.ispublishedtrue
cristin.fulltextpostprint
cristin.qualitycode1


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