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dc.contributor.authorTiwari, Subhadra
dc.contributor.authorMidtgård, Ole-Morten
dc.contributor.authorUndeland, Tore Marvin
dc.contributor.authorLund, Richard
dc.date.accessioned2017-02-01T09:00:47Z
dc.date.available2017-02-01T09:00:47Z
dc.date.created2016-12-23T13:11:52Z
dc.date.issued2016
dc.identifier.isbn978-1-4673-7884-0
dc.identifier.urihttp://hdl.handle.net/11250/2429112
dc.description.abstract—In this paper, the switching performance of asix-pack SiC MOSFET module (CCS050M12CM2) is inves-tigated experimentally using a standard double pulse testmethod. The upper three and the lower three MOSFETsof the CCS050M12CM2 are paralleled forming a half-bridgeconfiguration. Moreover, the performance comparison of theCCS050M12CM2 is carried out with a pin to pin compatibleSi IGBT module (FS75R12KT4B15) of the same rating. Thus,switching and driving energy losses can be compared fairly.Laboratory results show that CCS050M12CM2 switches muchfaster compared to FS75R12KT4B15 provided the same gateresistor is used. The measured total driving and switchingenergy losses are approximately 4 times in FS75R12KT4B15compared to CCS050M12CM2 at 25◦C. Moreover, the totalswitching energy loss is nearly independent of the temperaturefor CCS050M12CM2, whereas, FS75R12KT4B15 has 1.6 timeshigher switching energy loss at a junction temperature of 175◦Ccompared to 25◦C.nb_NO
dc.language.isoengnb_NO
dc.publisherIEEEnb_NO
dc.relation.ispartofWide Bandgap Power Devices and Applications (WiPDA), 2015 IEEE 3rd Workshop
dc.titleExperimental performance comparison of six-pack SiC MOSFET and Si IGBT modules paralleled in a half-bridge configuration for high temperature applicationsnb_NO
dc.typeChapternb_NO
dc.typeConference objectnb_NO
dc.typePeer reviewednb_NO
dc.source.pagenumber135-140nb_NO
dc.source.journalWide Bandgap Power Devices and Applications (WiPDA), 2015 IEEE 3rd Workshop onnb_NO
dc.identifier.doi10.1109/WiPDA.2015.7369260
dc.identifier.cristin1417145
dc.relation.projectNorges teknisk-naturvitenskapelige universitet: 90028000nb_NO
dc.description.localcode© 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. This is the authors' accepted and refereed manuscript to the article.nb_NO
cristin.unitcode194,63,20,0
cristin.unitnameInstitutt for elkraftteknikk
cristin.ispublishedtrue
cristin.fulltextpostprint
cristin.qualitycode1


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