Show simple item record

dc.contributor.authorHu, Yu
dc.contributor.authorSchøn, Hendrik
dc.contributor.authorØvrelid, Eivind Johannes
dc.contributor.authorNielsen, Øyvind
dc.contributor.authorArnberg, Lars
dc.identifier.citationAIP Advances 2012, 2(3)nb_NO
dc.description.abstractA new method to map the thermal donor concentration in silicon wafers using carrier density imaging is presented. A map of the thermal donor concentration is extracted with high resolution from free carrier density images of a silicon wafer before and after growth of thermal donors. For comparison, free carrier density mapping is also performed using the resistivity method together with linear interpolation. Both methods reveal the same distribution of thermal donors indicating that the carrier density imaging technique can be used to map thermal donor concentration. The interstitial oxygen concentration can also be extracted using the new method in combination withWijaranakula’s model. As part of this work, the lifetime at medium injection level is correlated to the concentration of thermal donors in the as-grown silicon wafer. The recombination rate is found to depend strongly on the thermal donor concentration except in the P-band region.nb_NO
dc.publisherAmerican Institute of Physicsnb_NO
dc.rightsNavngivelse 3.0 Norge*
dc.titleInvestigating thermal donors in n-type Cz silicon with carrier density imagingnb_NO
dc.typeJournal articlenb_NO
dc.typePeer reviewednb_NO
dc.source.journalAIP Advancesnb_NO
dc.description.localcodeCopyright 2012 Author(s). This article is distributed under a Creative Commons Attribution 3.0 Unported License.nb_NO

Files in this item


This item appears in the following Collection(s)

Show simple item record

Navngivelse 3.0 Norge
Except where otherwise noted, this item's license is described as Navngivelse 3.0 Norge