Blar i Institutt for elkraftteknikk på emneord "Insulated gate bipolar transistors, Silicon carbide, MOSFET, Silicon, Switches, Voltage measurement, Logic gates"
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Comparative evaluation of a commercially available 1.2 kV SiC MOSFET module and a 1.2 kV Si IGBT module
(Chapter, 2016)In this paper, a comparative performance evaluation of a 1.2 kV SiC MOSFET module and a 1.2 kV Si IGBT module is carried out under a series of different conditions such as similar dv/dt, di/dt, voltage overshoot, current ...