Blar i Fakultet for informasjonsteknologi og elektroteknikk (IE) på tidsskrift "Materials Science Forum"

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    • Challenges on drive circuit design for series-connected SiC power transistors 

      Peftitsis, Dimosthenis; Rabkowski, Jacek; Nee, Hans-Peter; Undeland, Tore Marvin (Journal article; Peer reviewed, 2017)
      The breakdown voltages of the currently available 1.2 and 1.7-kV classes Silicon Carbide (SiC) transistors are not sufficient to operate under medium blocking voltages. On the other hand, the fabrication yields of the ...

    • Improved SiC MOSFET SPICE model to avoid convergence errors 

      Hove, Håvard Lefdal; Spro, Ole Christian; Guidi, Giuseppe; Peftitsis, Dimosthenis (Peer reviewed; Journal article, 2020)
      This paper presents improvements to a SPICE model for a commercially available SiC MOSFET to avoid convergence errors while still providing reliable simulation results. Functionality in the internal part of the model that ...