Blar i Institutt for maskinteknikk og produksjon på tidsskrift "Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films"
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Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors
(Journal article; Peer reviewed, 2016)Tetrakisdimethylamido (TDMA) based precursors are commonly used to deposit metal oxides such as TiO2, ZrO2, and HfO2 by means of chemical vapor deposition and atomic layer deposition (ALD). Both thermal and plasma enhanced ...