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dc.contributor.authorSortland, Øyvind Sunde
dc.contributor.authorJomâa, Moez
dc.contributor.authorM'hamdi, Mohammed
dc.contributor.authorØvrelid, Eivind Johannes
dc.contributor.authorDi Sabatino Lundberg, Marisa
dc.date.accessioned2020-03-16T08:50:40Z
dc.date.available2020-03-16T08:50:40Z
dc.date.created2019-11-20T14:05:26Z
dc.date.issued2019
dc.identifier.citationAIP Conference Proceedings. 2019, 2147 (1), .nb_NO
dc.identifier.issn0094-243X
dc.identifier.urihttp://hdl.handle.net/11250/2646866
dc.description.abstractIn Czochralski monocrystalline silicon growth, structure loss (SL) is the loss of the mono-crystalline structure. It represents a significant loss of productivity. In this work, this phenomenon is investigated by statistical analysis of production data of roughly 14000 ingots produced over a year of time at NorSun factory in Årdal, Norway. It is found that ingots with structure loss typically have lower heater power and temperature fluctuations than ingots without structure loss after four hours of body (ca. 240 mm). Particularly, ingots without manual adjustment by furnace operator have significantly higher frequency of structure loss than ingots for which the operator has increased the temperature one or more times. Most ingots with structure loss are also found to have a higher pull speed on average than ingots without structure loss, and that there is a threshold below which no ingots had structure loss. A binary logistic regression was used for classification of ingots with and without structure loss and 30% of the data was used to comparison of predictions of the model. Using only the standard deviation of the temperature fluctuations around a moving average provided a prediction accuracy of 99.6%, for ingots that have passed six hours of body (ca. 360 mm).nb_NO
dc.language.isoengnb_NO
dc.publisherAIP Publishingnb_NO
dc.titleStatistical analysis of structure loss in Czochralski silicon growthnb_NO
dc.typeJournal articlenb_NO
dc.typePeer reviewednb_NO
dc.description.versionpublishedVersionnb_NO
dc.source.pagenumber7nb_NO
dc.source.volume2147nb_NO
dc.source.journalAIP Conference Proceedingsnb_NO
dc.source.issue1nb_NO
dc.identifier.doi10.1063/1.5123875
dc.identifier.cristin1749970
dc.relation.projectNorges forskningsråd: 257639nb_NO
dc.description.localcodeLocked until 27.8.2020 due to copyright restrictions. Published by AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Journal of Applied Physics and may be found at http://dx.doi.org/10.1063/1.5123875nb_NO
cristin.unitcode194,66,35,0
cristin.unitnameInstitutt for materialteknologi
cristin.ispublishedtrue
cristin.fulltextoriginal
cristin.qualitycode1


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