The optoelectronic properties of semiconductors in a fiber waveguide form make semiconductor core fibers a promising platform for many applications including infrared transmission, fiber detectors and nonlinear optics. In this work, the four point probe method is used to characterize core from fibers produced using the molten core draw (MCD) method. Sample preparation techniques are introduced to perform four point probe and Hall measurements. Maskless lithography is used to pattern electrical contacts on fiber cores with high positioning accuracy and the use of a permanent epoxy based resist is shown to be effective at covering cracks in the fiber cladding. Resistivity measurements performed on Si fibers with low purity CaO based interface coatings showed that the fiber drawing process introduces impurities into the fiber core, causing a drop in resistivity. As-drawn SiGe fibers showed no change in resistivity with high purity CaO based and boron containing coatings. This changed after laser annealing, where the resistivity of the SiGe fiber with boron coating dropped by over two orders of magnitude.