Electronic bulk and domain wall properties in B-site doped hexagonal ErMnO3
Journal article, Peer reviewed
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OriginalversjonPhysical Review B. 2018, 97 (8), . 10.1103/PhysRevB.97.085143
Acceptor and donor doping is a standard for tailoring semiconductors. More recently, doping was adapted to optimize the behavior at ferroelectric domain walls. In contrast to more than a century of research on semiconductors, the impact of chemical substitutions on the local electronic response at domain walls is largely unexplored. Here, the hexagonal manganite ErMnO3 is donor doped with Ti4+. Density functional theory calculations show that Ti4+ goes to the B site, replacing Mn3+. Scanning probe microscopy measurements confirm the robustness of the ferroelectric domain template. The electronic transport at both macroscopic and nanoscopic length scales is characterized. The measurements demonstrate the intrinsic nature of emergent domain wall currents and point towards Poole-Frenkel conductance as the dominant transport mechanism. Aside from the new insight into the electronic properties of hexagonal manganites, B-site doping adds an additional degree of freedom for tuning the domain wall functionality.