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dc.contributor.authorSortland, Øyvind Sunde
dc.contributor.authorØvrelid, Eivind Johannes
dc.contributor.authorM'hamdi, Mohammed
dc.contributor.authorDi Sabatino Lundberg, Marisa
dc.identifier.citationJournal of Crystal Growth. 2019, 510 1-6.nb_NO
dc.description.abstractIn the production of monocrystalline silicon by the Czochralski process, structure loss frequently reduces yield and increases production time. Structure loss means the transition from monocrystalline to multicrystalline structure. It is typically preceded by generation of dislocations and slip. Previous work concluded that a pinhole (i.e. a cavity from gas bubble in the melt) was the main cause of structure loss in an n-type Czochralski ingot. In the present study, seven industrial n-type Czochralski silicon ingots were investigated to assess whether pinholes frequently contribute to cause structure loss. Pinholes were found within 5 cm above the position where dislocations were generated in four out of the seven ingots. Slices were cut with the pinholes at one surface and etched with Sopori etchant. The pinholes did not appear to have affected the arrangements of etch pits in these samples and investigation of pinholes did not reveal the cause of structure loss. Furthermore, there were not significantly higher pinhole frequency before structure loss compared to ingots without structure loss among 4041 industrial ingots. Modeling of thermal stresses showed stress concentration around a pinhole, and it gives new insight into the level of stress the ingot can endure without generating dislocations and slip.nb_NO
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 Internasjonal*
dc.titleInvestigation of pinholes in Czochralski silicon ingots in relation to structure lossnb_NO
dc.typeJournal articlenb_NO
dc.typePeer reviewednb_NO
dc.source.journalJournal of Crystal Growthnb_NO
dc.description.localcode© 2019. This is the authors’ accepted and refereed manuscript to the article. Locked until 05.01.2021 due to copyright restrictions. This manuscript version is made available under the CC-BY-NC-ND 4.0 license
cristin.unitnameInstitutt for materialteknologi

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Attribution-NonCommercial-NoDerivatives 4.0 Internasjonal
Med mindre annet er angitt, så er denne innførselen lisensiert som Attribution-NonCommercial-NoDerivatives 4.0 Internasjonal