dc.contributor.author | Krzysztof, Adamczyk | |
dc.contributor.author | Søndenå, Rune | |
dc.contributor.author | Stokkan, Gaute | |
dc.contributor.author | Looney, Erin | |
dc.contributor.author | Jensen, Mallory | |
dc.contributor.author | Lai, Barry | |
dc.contributor.author | Rinio, Markus | |
dc.contributor.author | Sabatino, Marisa Di | |
dc.date.accessioned | 2018-03-09T13:13:36Z | |
dc.date.available | 2018-03-09T13:13:36Z | |
dc.date.created | 2018-02-28T09:34:08Z | |
dc.date.issued | 2018 | |
dc.identifier.issn | 0021-8979 | |
dc.identifier.uri | http://hdl.handle.net/11250/2489847 | |
dc.description.abstract | In this work, we applied internal quantum efficiency mapping to study the recombination activity of grain boundaries in High Performance Multicrystalline Silicon under different processing conditions. Wafers were divided into groups and underwent different thermal processing, consisting of phosphorus diffusion gettering and surface passivation with hydrogen rich layers. After these thermal treatments, wafers were processed into heterojunction with intrinsic thin layer solar cells. Light Beam Induced Current and Electron Backscatter Diffraction were applied to analyse the influence of thermal treatment during standard solar cell processing on different types of grain boundaries. The results show that after cell processing, most random-angle grain boundaries in the material are well passivated, but small-angle grain boundaries are not well passivated. Special cases of coincidence site lattice grain boundaries with high recombination activity are also found. Based on micro-X-ray fluorescence measurements, a change in the contamination level is suggested as the reason behind their increased activity. | nb_NO |
dc.language.iso | eng | nb_NO |
dc.publisher | AIP Publishing | nb_NO |
dc.title | Recombination activity of grain boundaries in high-performance multicrystalline Si during solar cell processing | nb_NO |
dc.type | Journal article | nb_NO |
dc.type | Peer reviewed | nb_NO |
dc.description.version | publishedVersion | nb_NO |
dc.source.volume | 123 | nb_NO |
dc.source.journal | Journal of Applied Physics | nb_NO |
dc.source.issue | 5 | nb_NO |
dc.identifier.doi | https://doi.org/10.1063/1.5018797 | |
dc.identifier.cristin | 1569319 | |
dc.relation.project | Norges forskningsråd: 228930 | nb_NO |
dc.description.localcode | Published by AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. Locked until 1.1.2019 due to copyright restrictions. The following article appeared in Journal of Applied Physics and may be found at https://aip.scitation.org/doi/full/10.1063/1.5018797 | nb_NO |
cristin.unitcode | 194,0,0,0 | |
cristin.unitname | Norges teknisk-naturvitenskapelige universitet | |
cristin.ispublished | true | |
cristin.fulltext | original | |
cristin.qualitycode | 1 | |