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dc.contributor.advisorKildemo, Mortennb_NO
dc.contributor.advisorReenaas, Turrid Worrennb_NO
dc.contributor.advisorAas, Lars Martin Sandviknb_NO
dc.contributor.authorLiudi-Mulyo, Andreasnb_NO
dc.date.accessioned2014-12-19T13:19:12Z
dc.date.available2014-12-19T13:19:12Z
dc.date.created2013-12-10nb_NO
dc.date.issued2013nb_NO
dc.identifier677965nb_NO
dc.identifierntnudaim:10263nb_NO
dc.identifier.urihttp://hdl.handle.net/11250/247152
dc.description.abstractThis report describes the development of a photoreflectance (PR) technique in order to study InAs/GaAs quantum dots-based intermediate band solar cells (QD-IBSC). The motivation for this study, is that PR has previously been applied to detect the optical transitions involving the intermediate band as well as the excited states of the quantum dots (QDs). Such excited states are detrimental for the QD-IBSC performance, and they are not readily detected by photoluminescence (PL).The PR signals show several unique peaks for all samples, related to their properties. The Franz-Keldysh oscillations (FKO) are observed and the fitting is done by using Airy function. These oscillations can be used to determine electro-optic energy and the built-in electric field. Energy bandgap of the various materials composing the sample (Al(0.3)Ga(0.7)As, GaAs, wetting layer (WL) and QDs) is resolved using first derivative Lorentzian lineshape function. To complement PR findings, PL measurements for a wide range of excitation energies are conducted at room-temperature. The energy bandgap of the WL is identified in the low PL excitation energy.nb_NO
dc.languageengnb_NO
dc.publisherInstitutt for fysikknb_NO
dc.titleCharacterisation of quantum dot-intermediate band solar cells with optical spectroscopynb_NO
dc.typeMaster thesisnb_NO
dc.source.pagenumber112nb_NO
dc.contributor.departmentNorges teknisk-naturvitenskapelige universitet, Fakultet for naturvitenskap og teknologi, Institutt for fysikknb_NO


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