Implementing a Full-Band Monte Carlo Model for Zincblende Structure Semiconductors

Abstract

During the work with this master's thesis a number of improvements have been made to the Monte Carlo program being developed at FFI. Algorithms for handling numerical band and scattering rate data have been constructed and integrated with the program. Of all the changes made in this work, most important is the fact that the program has been made capable of running with band structures and scattering rates calculated by the k*p-method, leaving the less accurate analytical approximations behind. The program is now capable of running bulk Monte Carlo simulations using a full-band model for the valence bands. All important infrastructure is also set up for adding full-band versions of other bands.