Ensemble averaged and single Particle Auger Lifetimes in Zincblende Structure Semiconductors

Abstract

In this master?s thesis, ensemble averaged and k-dependent Augerrecombination processes are studied using Monte Carlo integration. Effectsof introducing kp-overlap integrals, as opposed to constant overlap integrals, aredemonstrated and discussed. Band structures were based on a $14\times 14$ $kp$ model ofHg0.72Cd0.28Te at T = 300K and T = 77K, respectively. Methods for calculatingcarrier-carrier interaction, carrier densities and Fermi energy levels are alsodescribed. The latter two were implemented to aid in the calculation of the Augerlifetimes. It was found that within the theoretical framework used in this thesis, carriersaturation effects may already occur in the context of low-intensity laser irradiated Hg(1-x)CdxTe.