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dc.contributor.advisorWells, Justin
dc.contributor.authorStrand, Frode Sneve
dc.date.accessioned2017-03-10T15:59:53Z
dc.date.available2017-03-10T15:59:53Z
dc.date.created2016-08-08
dc.date.issued2016
dc.identifierntnudaim:15935
dc.identifier.urihttp://hdl.handle.net/11250/2433713
dc.description.abstractA proposed graphene integrated semiconductor radiation sensor takes advantage of the electric field effect in graphene by measuring the change in resistance as a function of radiation exposure to the semiconductor substrate. The realisation of such radiation detectors requires that the controlled growth of graphene on wafer scale is possible. A possible production method is iron-mediated epitaxial graphene growth on silicon carbide (SiC) surfaces, where thin graphitic films can be synthesised by annealing. This technique has already been shown to lower the graphitisation temperature from around 1300\deg{} C to 600\deg{} C, whilst producing a FeSi interlayer as a by-product. A requirement for the operation of the aforementioned radiation sensor is that the graphene sheet is separated from the substrate by an insulator. In this thesis, the FeSi interlayer was studied by growing epitaxial graphene from a Fe-treated SiC substrate, and tracking the evolution of the iron layer during annealing. The temperature at which the graphene and FeSi formation begins, and the quality of crystal structure as well as the properties of the resulting FeSi was studied by X-ray photoelectron spectroscopy (XPS), low-energy electron diffraction and microscopy (LEED and LEEM) and photoelectron diffraction (PED). The FeSi and thus graphene formation was found to begin at a temperature close to 390\deg{} C, which is a good improvement over graphene formation from a bare SiC surface, which occurs at around 1300\deg{}C. Moreover, the FeSi interlayer was found to take on a crystal structure commensurate to the SiC, thereby providing good conditions for high quality graphene formation on the surface. Last, the FeSi was found to be insulating, thus fulfilling the requirement for a working radiation sensor.
dc.languageeng
dc.publisherNTNU
dc.subjectFysikk og matematikk, Teknisk fysikk
dc.titleStudy of FeSi Interlayers Formed During Iron-Mediated Epitaxial Growth of Graphene on SiC Substrates
dc.typeMaster thesis


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