Browsing Øvrige samlinger by Author "Ubostad, Tobias Nieckula"
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Design Considerations for Series-Connected SiC MOSFETs Operating at 100 kV/µs
Ubostad, Tobias Nieckula; Peftitsis, Dimosthenis (Chapter, 2023)Series connection of Silicon Carbide (SiC) metal-oxide semiconductor field-effect transistors (MOSFETs) is an interesting solution to design switches for voltages that are not yet commercially available or limited for ... -
Die-Level Series-Connection of SiC MOSFETs and Integration of Decoupling Capacitors
Ubostad, Tobias Nieckula; Peftitsis, Dimosthenis (Chapter, 2024)Series connection of Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) is a viable solution to design switches for voltages that are not yet commercially available or limited for single-die ... -
Gate driver, snubber and circuit design considerations for fast-switching series-connected SiC MOSFETs
Ubostad, Tobias Nieckula; Peftitsis, Dimosthenis (Journal article; Peer reviewed, 2024)Series connection of Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) is an interesting solution to design switches for voltages that are not yet commercially available or limited for ... -
A Hybrid Current- and Voltage-Source Driver for Active Driving of Series-Connected SiC MOSFETs
Ubostad, Tobias Nieckula; Philipps, Daniel Alexander; Peftitsis, Dimosthenis (Peer reviewed; Journal article, 2024)The series-connection of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors ( mosfet s) is an attractive way of increasing the blocking voltage capability of a switch. However, due to inherent transient ... -
A Hybrid Current- and Voltage-Source Driver for Active Driving of Series-Connected SiC MOSFETs
Ubostad, Tobias Nieckula; Philipps, Daniel Alexander; Peftitsis, Dimosthenis (Peer reviewed; Journal article, 2024)The series-connection of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors ( mosfet s) is an attractive way of increasing the blocking voltage capability of a switch. However, due to inherent transient ... -
Low Inductive Characterization of Fast-Switching SiC MOSFETs and Active Gate Driver Units
Philipps, Daniel Alexander; Xue, Peng; Ubostad, Tobias Nieckula; Iannuzzo, Francesco; Peftitsis, Dimosthenis (Peer reviewed; Journal article, 2023)Accurate switching device characterization is necessary for effectively utilizing the technological advantages of Silicon Carbide (SiC) Power Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) over their Silicon ... -
Power Module Design with Chip-Level Series-Connected SiC MOSFETs
Ubostad, Tobias Nieckula; Peftitsis, Dimosthenis (Chapter, 2024)Series connection of Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) is a viable solution to design switches for voltages that are not yet commercially available or limited for single-die ...