Blar i Institutt for materialteknologi på tidsskrift "Physical Review B"

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    • Electronic bulk and domain wall properties in B-site doped hexagonal ErMnO3 

      Holstad, Theodor S.; Evans, Donald; Ruff, Alexander; Småbråten, Didrik Rene; Schaab, Jakob; Tzschaschel, Christian; Yan, Zewu; Bourret, Edith; Selbach, Sverre Magnus; Krohns, Stephan; Meier, Dennis (Journal article; Peer reviewed, 2018)
      Acceptor and donor doping is a standard for tailoring semiconductors. More recently, doping was adapted to optimize the behavior at ferroelectric domain walls. In contrast to more than a century of research on semiconductors, ...

    • Oxygen vacancies in the bulk and at neutral domain walls in hexagonal YMnO3 

      Skjærvø, Sandra Helen; Småbråten, Didrik Rene; Spaldin, Nicola A; Tybell, Per Thomas Martin; Selbach, Sverre Magnus (Journal article; Peer reviewed, 2018)
      We use density functional calculations to investigate the accommodation and migration of oxygen vacancies in bulk hexagonal YMnO3, and to study interactions between neutral ferroelectric domain walls and oxygen vacancies. ...