Blar i Institutt for materialteknologi på tidsskrift "Physica Status Solidi (a) applications and materials science"
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Defect related radiative recombination in mono-like crystalline silicon wafers
(Journal article, 2017)We report on studies of sub-bandgap defect related photoluminescence (DRL) signals originating from radiative recombination through traps in the bandgap of cooled mono-like silicon wafers. Spectrally resolved photoluminescence ... -
Experimental Investigation of Zinc Antimonide Thin Film Thermoelectric Element over Wide Range of Operating Conditions
(Journal article, 2017)Zinc antimonide compounds are among the most efficient thermoelectric (TE) materials with exceptional low thermal conductivity at moderate temperatures up to 350 °C. This study aims to evaluate the performance of a zinc ... -
Impurity control in high performance multicrystalline silicon
(Journal article; Peer reviewed, 2017)We report results from a national project about impurities in high performance multicrystalline silicon: Contamination sources, transport routes, interaction with crystal defects and impact on solar cell efficiency parameters. ... -
Nanometer‐Scale Depth‐Resolved Atomic Layer Deposited SiO2 Thin Films Analyzed by Glow Discharge Optical Emission Spectroscopy
(Journal article; Peer reviewed, 2018)In this contribution, pulsed radio frequency (rf) glow discharge optical emission spectroscopy (GDOES) is used to investigate the film properties of SiO2 deposited by plasma enhanced atomic layer deposition (PEALD), for ... -
Photocorrosion of n- and p-Type Semiconducting Oxide-Covered Metals: Case Studies of Anodized Titanium and Copper
(Peer reviewed; Journal article, 2022)Illumination affects corrosion of oxide-covered metals via photoinitiated dissolution processes. Herein, anodized titanium with n-type semiconducting anatase TiO2 and anodized copper with p-type semiconducting cuprite Cu2O ...