Blar i Institutt for fysikk på tidsskrift "Nanotechnology"
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Epitaxially grown III-arsenide-antimonide nanowires for optoelectronic applications
(Journal article; Peer reviewed, 2019)Epitaxially grown ternary III-arsenide-antimonide (III-As–Sb) nanowires (NWs) are increasingly attracting attention due to their feasibility as a platform for the integration of largely lattice-mismatched antimonide-based ... -
Focused ion beam lithography for position-controlled nanowire growth
(Peer reviewed; Journal article, 2023)