Development of a method to determine oxygen distribution in industrial monocrystalline silicon ingots
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An alternative method to determine oxygen concentration in industrial monocrystalline silicon has been developed and tested, resorting to statistical analysis and modeling. The model has been applied to different set samples, with a prediction accuracy varying between 90% and 95%. This model works on the assumption of a very effective heat treatment for thermal donor killing and similar thermal history of the produced/analyzed ingots.