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dc.contributor.advisorØvrelid, Eivindnb_NO
dc.contributor.advisorNordseth, Ørnulfnb_NO
dc.contributor.advisorMarstein, Erik S.nb_NO
dc.contributor.authorHelland, Susannenb_NO
dc.date.accessioned2014-12-19T13:25:47Z
dc.date.available2014-12-19T13:25:47Z
dc.date.created2012-04-20nb_NO
dc.date.issued2011nb_NO
dc.identifier517072nb_NO
dc.identifierntnudaim:6447nb_NO
dc.identifier.urihttp://hdl.handle.net/11250/248914
dc.description.abstractHigh quality surface passivation is important for the reduction of recombination losses in solar cells. In this work, the passivation properties of amorphous hydrogenated silicon nitride for crystalline silicon solar cells were investigated, using electrical characterization, lifetime measurements and spectroscopic ellipsometry. Thin films of varying composition were deposited on p-type monocrystalline silicon wafers by plasma enhanced chemical vapor deposition (PECVD). Highest quality surface passivation was obtained for silicon-rich thin films, where a surface recombination velocity of 30 cm/s was obtained after a heat treatment corresponding to the industrial contact firing process. Electrical characterization of the interface between silicon nitride and silicon was performed by capacitance and conductance measurements. Several challenging aspects related to the interpretation of these measurements were investigated in detail, including charging and discharging, leakage currents, and frequency dependent capacitance.nb_NO
dc.languageengnb_NO
dc.publisherInstitutt for materialteknologinb_NO
dc.subjectntnudaim:6447no_NO
dc.subjectMTNANO Nanoteknologino_NO
dc.subjectNanoteknologi for materialer, energi og miljøno_NO
dc.titleElectrical Characterization of Amorphous Silicon Nitride Passivation Layers for Crystalline Silicon Solar Cellsnb_NO
dc.typeMaster thesisnb_NO
dc.source.pagenumber119nb_NO
dc.contributor.departmentNorges teknisk-naturvitenskapelige universitet, Fakultet for naturvitenskap og teknologi, Institutt for materialteknologinb_NO


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