• Atomistic approach to simulate kink migration and kink-pair formation in silicon: The kinetic activation-relaxation technique 

      Eliassen, Simen Nut Hansen; Friis, Jesper; Ringdalen, Inga Gudem; Mousseau, Normand; Trochet, Mickaël; Li, Yanjun (Journal article; Peer reviewed, 2019)
      The energy conversion efficiency of solar cells based on multicrystalline silicon is greatly deteriorated by dislocations. However, an in-depth understanding on the dislocation motion dynamics down to atomic scale is still ...
    • Determining fundamental properties from diffraction: Electric field induced strain and piezoelectric coefficient 

      Hinterstein, Manuel; Lee, Kaiyang; Esslinger, Sophia; Glaum, Julia; Studer, Andrew; Hoffman, Mark John; Hoffmann, Michael (Peer reviewed; Journal article, 2019)
      Neutron powder diffraction was used in operando to determine the macroscopic strain and piezoelectric coefficient as a function of applied electric field in a technically relevant actuator material. We were able to ...
    • First-principles study of topologically protected vortices and ferroelectric domain walls in hexagonal YGaO3 

      Småbråten, Didrik Rene; Nakata, Ayako; Meier, Dennis; Miyazaki, Tsuyoshi; Selbach, Sverre Magnus (Peer reviewed; Journal article, 2020)
      Ferroelectric behavior on the meso- and macroscopic scale depends on the formation and dynamics of domains and controlling the domain patterns is imperative to device performance. While density functional theory (DFT) ...
    • Local control of improper ferroelectric domains in YMnO 3 

      Kuerten, Lukas; Krohns, Stephan; Schoenherr, Peggy; Holeczek, Katharina; Pomjakushina, Ekaterina; Lottermoser, Thomas; Trassin, Morgan; Meier, Dennis Gerhard; Fiebig, Manfred (Peer reviewed; Journal article, 2020)
      Improper ferroelectrics are described by two order parameters: a primary one, driving a transition to long-range distortive, magnetic, or otherwise nonelectric order, and the electric polarization, which is induced by the ...
    • Low-energy properties of electrons and holes in CuFeS2 

      Brekke, Bjørnulf; Malyshev, Roman; Svenum, Ingeborg-Helene; Selbach, Sverre Magnus; Tybell, Per Thomas Martin; Brüne, Christoph; Brataas, Arne (Peer reviewed; Journal article, 2022)
      The antiferromagnetic semiconductor CuFeS2 belongs to a magnetic symmetry class that is of interest for spintronics applications. In addition, its crystal lattice is compatible with Si, making it possible to integrate it ...
    • Uniaxial Néel vector control in perovskite oxide thin films by anisotropic strain engineering 

      Kjærnes, Kristoffer; Hallsteinsen, Ingrid; Chopdekar, R. V.; Moreau, Magnus; Bolstad, Torstein; Svenum, Ingeborg-Helene; Selbach, Sverre Magnus; Tybell, Per Thomas Martin (Peer reviewed; Journal article, 2021)
      Antiferromagnetic (AF) thin films typically exhibit a multidomain state, and control of the AF Néel vector is challenging, as AF materials are robust to magnetic perturbations. In this paper, uniaxial Néel vector control ...