Blar i Institutt for materialteknologi på tidsskrift "Energy Procedia"
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Defects in multicrystalline Si wafers studied by spectral photoluminescence imaging, combined with EBSD and dislocation mapping
(Journal article; Peer reviewed, 2016)Defect related sub-band gap luminescence emissions due to Shockley-Read-Hall recombination in mc-Si wafers have been investigated with spectral photoluminescence imaging, combined with electron backscatter diffraction and ... -
Effect of carbonization conditions on CO2 gasification reactivity of biocarbon
(Journal article; Peer reviewed, 2017)Substituting fossil reductants with biocarbon is a promising way for reducing greenhouse gas emissions and increase sustainability of the metallurgical industry. Biocarbon can be produced from a wide range of raw biomass ... -
Internal Gettering of Iron at Extended Defects
(Journal article; Peer reviewed, 2014)The role of iron in crystalline silicon solar cells has been extensively investigated, yet the interaction mechanisms with structural defects have not been fully understood. In this work we have investigated a multicrystalline ... -
Temporal stability of a-Si:H and a-SiNx:H on crystalline silicon wafers
(Journal article; Peer reviewed, 2017)The temporal stability of single layer thin films of hydrogenated amorphous silicon (a-Si:H) and silicon nitride (a-SiNx:H) passivated crystalline silicon wafers have been investigated over 18 months. The thin films were ... -
The effect of phosphorus diffusion gettering on recombination at grain boundaries in HPMC-silicon wafers
(Journal article; Peer reviewed, 2016)The influence of phosphorus diffusion gettering on recombination at grain boundaries has been studied in a commercially cast high performance multicrystalline silicon block. Wafers from four different heights have been ...