Blar i Institutt for materialteknologi på tidsskrift "AIP Advances"
Viser treff 1-6 av 6
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134Ba diffusion in polycrystalline BaMO3 (M = Ti, Zr, Ce)
(Journal article; Peer reviewed, 2017)Cation diffusion in functional oxide materials is of fundamental interest, particularly in relation to interdiffusion of cations in thin film heterostructures and chemical stability of materials in high temperature ... -
Anisotropic in-plane dielectric and ferroelectric properties of tensile-strained BaTiO3 films with three different crystallographic orientations
(Peer reviewed; Journal article, 2021)Ferroelectric properties of films can be tailored by strain engineering, but a wider space for property engineering can be opened by including crystal anisotropy. Here, we demonstrate a huge anisotropy in the dielectric ... -
Enhanced in-plane ferroelectricity in BaTiO3 thin films fabricated by aqueous chemical solution deposition
(Journal article; Peer reviewed, 2018)Ferroelectric BaTiO3 is widely used in capacitors, but the low Curie temperature limits a further use of BaTiO3. In this work we present an aqueous chemical solution deposition (CSD) route for BaTiO3 thin films, demonstrating ... -
Investigating thermal donors in n-type Cz silicon with carrier density imaging
(Journal article; Peer reviewed, 2012)A new method to map the thermal donor concentration in silicon wafers using carrier density imaging is presented. A map of the thermal donor concentration is extracted with high resolution from free carrier density images ... -
Modeling interfacial mass transfer driven bubble growth in supersaturated solutions
(Peer reviewed; Journal article, 2020)A commonly encountered phenomenon in chemical processes is bubble evolution driven by supersaturation. On the continuum scale, this essentially involves interfacial mass transfer resulting in the growth of bubbles and their ... -
Modelling of the vertical deflection of ferroelectric bending tongues loaded at their free end
(Peer reviewed; Journal article, 2019)In this work, a model to describe the vertical deflection of ferroelectric bending tongues with a load at their free end is proposed. The model is based on the ferroelectric switching criterion developed by Hwang et al. ...