• Aluminum-based contacts for use in GaSb-based diode lasers 

      Tran, Thanh-Nam; Patra, Saroj Kumar; Breivik, Magnus; Fimland, Bjørn-Ove (Journal article; Peer reviewed, 2016)
      Aluminum-based contacts could be a good alternative to conventional gold-based contacts for a number of GaSb-based devices. In this study, the use of some Al-based contacts in GaSb-based diode lasers was investigated via ...
    • Antimonide-based mid-infrared laser structures: Growth and characterization 

      Patra, Saroj Kumar (Doctoral theses at NTNU;2016:352, Doctoral thesis, 2016)
      Antimonide-based mid-infrared laser structures have been grown by molecular beam epitaxy (MBE). Epitaxially grown laser-related semiconductor materials have been characterized by X-ray diffraction (XRD), Hall ...
    • Critical thickness of MBE-grown Ga1-xInxSb (x < 0.2) on GaSb 

      Nilsen, Tron Arne; Breivik, Magnus; Selvig, Espen; Fimland, Bjørn-Ove (Journal article; Peer reviewed, 2009)
      Several Ga1−xInxSb layers, capped with 1 μm of GaSb, were grown on GaSb(0 0 1) substrates by molecular beam epitaxy in a Varian Gen II Modular system using either the conventional sample growth position with substrate ...
    • Determination of GaAs zinc blende/wurtzite band offsets utilizing GaAs nanowires with an axial GaAsSb insert 

      Ahtapodov, Lyubomir; Kauko, H; Munshi, A Mazid; Fimland, Bjørn-Ove; Van Helvoort, Antonius; Weman, Helge (Journal article; Peer reviewed, 2017)
      By applying a correlated micro-photoluminescence spectroscopy and transmission electron microscopy (TEM) approach, we have utilized molecular beam epitaxy grown self-catalysed GaAs nanowires (NWs) with an axial GaAsSb ...
    • Dopant incorporation in Al0.9Ga0.1As0.06Sb0.94 grown by molecular beam epitaxy 

      Patra, Saroj Kumar; Tran, Thanh-Nam; Vines, Lasse; Kolevatov, Ilia; Monakhov, Edouard; Fimland, Bjørn-Ove (Journal article, 2017)
      Incorporation of beryllium (Be) and tellurium (Te) dopants in epitaxially grown Al0.9Ga0.1As0.06Sb0.94 layers was investigated. Carrier concentrations and mobilities of the doped layers were obtained from room temperature ...
    • Epitaxially grown III-arsenide-antimonide nanowires for optoelectronic applications 

      Ren, Dingding; Ahtapodov, Lyubomir; Van Helvoort, Antonius; Weman, Helge; Fimland, Bjørn-Ove (Journal article; Peer reviewed, 2019)
      Epitaxially grown ternary III-arsenide-antimonide (III-As–Sb) nanowires (NWs) are increasingly attracting attention due to their feasibility as a platform for the integration of largely lattice-mismatched antimonide-based ...
    • Exploring possibilities in AFM studies of InAs/GaAs QDs 

      Iden, Simon Riis (Master thesis, 2012)
      The main focus of this master thesis work has been to image InAs emph{quantum dots} (QDs) using emph{atomic force microscopy} (AFM), to identify and evaluate various image processing methods used to estimate the volume of ...
    • Fabrication of GaSb-based Y-junction Laser for Gas Spectroscopy 

      Haddeland, Kjetil (Master thesis, 2015)
      Trace gas detection and pollution monitoring are becoming increasingly important for human safety and conservation of the environment. GaSb based semiconductor diode lasers, emitting in the mid-infrared wavelength region ...
    • Fabrication of mid-infrared laser diodes: for gas sensing applications 

      Breivik, Magnus (Doktoravhandlinger ved NTNU, 1503-8181; 2013:373, Doctoral thesis, 2013)
      Mid-infrared laser diodes have been fabricated and tested, and semiconductor materials related to mid-infrared lasers have been characterized by X-ray diffraction (XRD). The temperature dependent lattice constant of Al0.9 ...
    • Facet coating on mid-IR laser diodes 

      Myrvang, Olav Aleksander (Master thesis, 2014)
      For this project laser diodes facets have been coated with HR-coating, PHR-coating, and AR-coating. Three lasers have been coated, all had HR-coating on one facet, the other facet was uncoated for one laser, PHR-coated for ...
    • GaN/AlGaN nanocolumn ultraviolet light-emitting diode using double-Layer graphene as substrate and transparent electrode 

      Høiaas, Ida Marie; Liudi Mulyo, Andreas; Vullum, Per Erik; Kim, Dong Chul; Ahtapodov, Lyubomir; Fimland, Bjørn-Ove; Kishino, Katsumi; Weman, Helge (Journal article, 2019)
      The many outstanding properties of graphene have impressed and intrigued scientists for the last few decades. Its transparency to light of all wavelengths combined with a low sheet resistance makes it a promising electrode ...
    • Growth and Characterization of Self- Catalyzed GaAsSb Nanowires for Optoelectronic Applications 

      Ren, Dingding (Doctoral theses at NTNU;2017:136, Doctoral thesis, 2017)
    • Growth study of self-assembled GaN nanocolumns on silica glass by plasma assisted molecular beam epitaxy 

      Liudi Mulyo, Andreas; Konno, Yuta; Nilsen, Julie Stene; Van Helvoort, Antonius; Fimland, Bjørn-Ove; Weman, Helge; Kishino, Katsumi (Journal article; Peer reviewed, 2017)
      We demonstrate GaN nanocolumn growth on fused silica glass by plasma-assisted molecular beam epitaxy. The effect of the substrate temperature, Ga flux and N2 flow rate on the structural and optical properties are studied. ...
    • The influence of AlN buffer layer on the growth of self-assembled GaN nanocolumns on graphene 

      Liudi Mulyo, Andreas; Rajpalke, Mohana; Vullum, Per Erik; Weman, Helge; Kishino, Katsumi; Fimland, Bjørn-Ove (Peer reviewed; Journal article, 2020)
      GaN nanocolumns were synthesized on single-layer graphene via radio-frequency plasma-assisted molecular beam epitaxy, using a thin migration-enhanced epitaxy (MEE) AlN buffer layer as nucleation sites. Due to the weak ...
    • Optimization and characterization of the Front Surface Field in Back-Contact Silicon Solar Cells 

      Krystad, Egil Grøndal (Master thesis, 2008)
      Interdigitated back-contact (IBC) solar cells are devices requiring very high carrier lifetimes. In this thesis, an investigation of the front-surface field (FSF) for increasing the effective lifetime of such solar cells ...
    • Patterning of the Oxide Mask for Nanowire Growth by Dry Etching 

      Ueland, Åsmund Stenhaug (Master thesis, 2015)
      In this master s thesis it is investigated how inductively coupled plasma reactive-ion etching, in combination with hydrofluoric acid wet etching, can be used to produce consistent and reliable nanoscaled holes with a high ...
    • Plasma-assisted oxide removal from p-type GaSb for low resistivity ohmic contacts 

      Tran, Thanh-Nam; Patra, Saroj Kumar; Breivik, Magnus; Fimland, Bjørn-Ove (Journal article, 2015)
      The effect of several plasma-assisted oxide removal techniques prior to metallization of p-type GaSb was investigated. Compared to conventional chemical methods, the plasma-assisted oxide removal resulted in significant ...
    • Processing Techniques for Dilute Nitride Gallium Arsenide Intermediate-Band Solar Cell Structures 

      Hallum, Goran Erik (Master thesis, 2016)
      A solar cell processing procedure is calibrated for dilute nitride GaAs intermediate band solar cell structures, and applied to a reference GaAs cell. The processing consists of front and backside contact metalization, a ...
    • Quantitative strain analysis of InAs/GaAs quantum dot materials 

      Vullum, Per Erik; Nord, Magnus Kristofer; Vatanparast, Maryam; Thomassen, Sedsel Fretheim; Boothroyd, Chris; Holmestad, Randi; Fimland, Bjørn-Ove; Reenaas, Turid Worren (Journal article; Peer reviewed, 2017)
      Geometric phase analysis has been applied to high resolution aberration corrected (scanning) transmission electron microscopy images of InAs/GaAs quantum dot (QD) materials. We show quantitatively how the lattice mismatch ...
    • Single-Mode Near-Infrared Lasing in a GaAsSb-Based Nanowire Superlattice at Room Temperature 

      Ren, Dingding; Ahtapodov, Lyubomir; Nilsen, Julie Stene; Yang, Jianfeng; Gustafsson, Anders; Huh, Junghwan; Conibeer, G; Van Helvoort, Antonius; Fimland, Bjørn-Ove; Weman, Helge (Journal article; Peer reviewed, 2018)
      Semiconductor nanowire lasers can produce guided coherent light emission with miniaturized geometry, bringing about new possibilities for a variety of applications including nanophotonic circuits, optical sensing, and ...