Browsing NTNU Open by Author "Fimland, Bjørn-Ove"
Now showing items 1-20 of 32
-
Aluminum-based contacts for use in GaSb-based diode lasers
Tran, Thanh-Nam; Patra, Saroj Kumar; Breivik, Magnus; Fimland, Bjørn-Ove (Journal article; Peer reviewed, 2016)Aluminum-based contacts could be a good alternative to conventional gold-based contacts for a number of GaSb-based devices. In this study, the use of some Al-based contacts in GaSb-based diode lasers was investigated via ... -
Antimonide-based mid-infrared laser structures: Growth and characterization
Patra, Saroj Kumar (Doctoral theses at NTNU;2016:352, Doctoral thesis, 2016)Antimonide-based mid-infrared laser structures have been grown by molecular beam epitaxy (MBE). Epitaxially grown laser-related semiconductor materials have been characterized by X-ray diffraction (XRD), Hall ... -
Critical thickness of MBE-grown Ga1-xInxSb (x < 0.2) on GaSb
Nilsen, Tron Arne; Breivik, Magnus; Selvig, Espen; Fimland, Bjørn-Ove (Journal article; Peer reviewed, 2009)Several Ga1−xInxSb layers, capped with 1 μm of GaSb, were grown on GaSb(0 0 1) substrates by molecular beam epitaxy in a Varian Gen II Modular system using either the conventional sample growth position with substrate ... -
Detecting minute amounts of nitrogen in GaNAs thin films using STEM and CBED
Vatanparast, Maryam; Shao, Yu-Tsun; Rajpalke, Mohana; Fimland, Bjørn-Ove; Reenaas, Turid Dory; Holmestad, Randi; Vullum, Per Erik; Zuo, Jian Min (Journal article; Peer reviewed, 2021)Nitrogen (N) is a common element added to GaAs for band gap engineering and strain compensation. However, detection of small amounts of N is difficult for electron microscopy as well as for other chemical analysis techniques. ... -
Determination of GaAs zinc blende/wurtzite band offsets utilizing GaAs nanowires with an axial GaAsSb insert
Ahtapodov, Lyubomir; Kauko, H; Munshi, A Mazid; Fimland, Bjørn-Ove; Van Helvoort, Antonius; Weman, Helge (Journal article; Peer reviewed, 2017)By applying a correlated micro-photoluminescence spectroscopy and transmission electron microscopy (TEM) approach, we have utilized molecular beam epitaxy grown self-catalysed GaAs nanowires (NWs) with an axial GaAsSb ... -
Development of tunable Y-junction laser diodes for trace-gas sensing applications
Tran, Thanh-Nam (Doctoral theses at NTNU;2023:422, Doctoral thesis, 2023)Y-junction laser diodes are promising light sources needed for trace-gas sensing systems based on tunable diode-laser absorption spectroscopy. The merit of this laser structure is the fabrication simplicity and the ability ... -
Dopant incorporation in Al0.9Ga0.1As0.06Sb0.94 grown by molecular beam epitaxy
Patra, Saroj Kumar; Tran, Thanh-Nam; Vines, Lasse; Kolevatov, Ilia; Monakhov, Edouard; Fimland, Bjørn-Ove (Journal article, 2017)Incorporation of beryllium (Be) and tellurium (Te) dopants in epitaxially grown Al0.9Ga0.1As0.06Sb0.94 layers was investigated. Carrier concentrations and mobilities of the doped layers were obtained from room temperature ... -
Epitaxially grown III-arsenide-antimonide nanowires for optoelectronic applications
Ren, Dingding; Ahtapodov, Lyubomir; Van Helvoort, Antonius; Weman, Helge; Fimland, Bjørn-Ove (Journal article; Peer reviewed, 2019)Epitaxially grown ternary III-arsenide-antimonide (III-As–Sb) nanowires (NWs) are increasingly attracting attention due to their feasibility as a platform for the integration of largely lattice-mismatched antimonide-based ... -
Exploring possibilities in AFM studies of InAs/GaAs QDs
Iden, Simon Riis (Master thesis, 2012)The main focus of this master thesis work has been to image InAs emph{quantum dots} (QDs) using emph{atomic force microscopy} (AFM), to identify and evaluate various image processing methods used to estimate the volume of ... -
Fabrication of GaSb-based Y-junction Laser for Gas Spectroscopy
Haddeland, Kjetil (Master thesis, 2015)Trace gas detection and pollution monitoring are becoming increasingly important for human safety and conservation of the environment. GaSb based semiconductor diode lasers, emitting in the mid-infrared wavelength region ... -
Fabrication of mid-infrared laser diodes: for gas sensing applications
Breivik, Magnus (Doktoravhandlinger ved NTNU, 1503-8181; 2013:373, Doctoral thesis, 2013)Mid-infrared laser diodes have been fabricated and tested, and semiconductor materials related to mid-infrared lasers have been characterized by X-ray diffraction (XRD). The temperature dependent lattice constant of Al0.9 ... -
Facet coating on mid-IR laser diodes
Myrvang, Olav Aleksander (Master thesis, 2014)For this project laser diodes facets have been coated with HR-coating, PHR-coating, and AR-coating. Three lasers have been coated, all had HR-coating on one facet, the other facet was uncoated for one laser, PHR-coated for ... -
GaAs/AlGaAs Nanowire Array Solar Cell Grown on Si with Ultrahigh Power-per-Weight Ratio
Mukherjee, Anjan; Ren, Dingding; Vullum, Per Erik; Huh, Junghwan; Fimland, Bjørn-Ove; Weman, Helge (Peer reviewed; Journal article, 2021)Here we demonstrate a more effective use of III–V photoconversion material to achieve an ultrahigh power-per-weight ratio from a solar cell utilizing an axial p-i-n junction GaAs/AlGaAs nanowire (NW) array grown by molecular ... -
GaN/AlGaN nanocolumn ultraviolet light-emitting diode using double-Layer graphene as substrate and transparent electrode
Høiaas, Ida Marie; Liudi Mulyo, Andreas; Vullum, Per Erik; Kim, Dong Chul; Ahtapodov, Lyubomir; Fimland, Bjørn-Ove; Kishino, Katsumi; Weman, Helge (Journal article, 2019)The many outstanding properties of graphene have impressed and intrigued scientists for the last few decades. Its transparency to light of all wavelengths combined with a low sheet resistance makes it a promising electrode ... -
Graphene-Based Transparent Conducting Substrates for GaN/AlGaN Nanocolumn Flip-Chip Ultraviolet Light-Emitting Diodes
Liudi Mulyo, Andreas; Mukherjee, Anjan; Høiaas, Ida Marie; Ahtapodov, Lyubomir; Nilsen, Tron Arne; Toftevaag, Håvard Hem; Vullum, Per Erik; Kishino, Katsumi; Weman, Helge; Fimland, Bjørn-Ove (Journal article; Peer reviewed, 2021)Flip-chip ultraviolet light-emitting diodes based on self-assembled GaN/AlGaN nanocolumns have been fabricated, exploiting single-layer graphene not only as a growth substrate but also as a transparent conducting electrode. ... -
Growth and Characterization of Self- Catalyzed GaAsSb Nanowires for Optoelectronic Applications
Ren, Dingding (Doctoral theses at NTNU;2017:136, Doctoral thesis, 2017) -
Growth study of self-assembled GaN nanocolumns on silica glass by plasma assisted molecular beam epitaxy
Liudi Mulyo, Andreas; Konno, Yuta; Nilsen, Julie Stene; Van Helvoort, Antonius; Fimland, Bjørn-Ove; Weman, Helge; Kishino, Katsumi (Journal article; Peer reviewed, 2017)We demonstrate GaN nanocolumn growth on fused silica glass by plasma-assisted molecular beam epitaxy. The effect of the substrate temperature, Ga flux and N2 flow rate on the structural and optical properties are studied. ... -
III-V Semiconductor Nanowire/Graphene Hybrid Structures: for Applications in Solar Cells and Ultraviolet Light-Emitting Diodes
Mukherjee, Anjan (Doctoral theses at NTNU;2022:211, Doctoral thesis, 2022)Recent development on high-crystalline and almost defect-free one-dimensional nanowire (NW) structures of III-V semiconductors through various epitaxial growth techniques leads to the possibility of producing a new generation ... -
InAsSb/AlInAsSb nBn Photodiodes - A Basic Device Model
Marín Aguilera, Guillem (Master thesis, 2021)I dette arbeidet er bandstrukturen til en Unipolar Barrier Infrared Detector simulert. Designforslaget for sensoren er basert på en tidligere studie utført av forfatteren. Komponenten består av en heterostruktur som ... -
The influence of AlN buffer layer on the growth of self-assembled GaN nanocolumns on graphene
Liudi Mulyo, Andreas; Rajpalke, Mohana; Vullum, Per Erik; Weman, Helge; Kishino, Katsumi; Fimland, Bjørn-Ove (Peer reviewed; Journal article, 2020)GaN nanocolumns were synthesized on single-layer graphene via radio-frequency plasma-assisted molecular beam epitaxy, using a thin migration-enhanced epitaxy (MEE) AlN buffer layer as nucleation sites. Due to the weak ...