Blar i NTNU Open på forfatter "Mocanu, Felix C."
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Electric-field-induced annihilation of localized gap defect states in amorphous phase-change memory materials
Konstantinou, Konstantinos; Mocanu, Felix C.; Akola, Jaakko; Elliott, Stephen R. (Peer reviewed; Journal article, 2022)Structural relaxation of amorphous phase-change-memory materials has been attributed to defect-state annihilation from the band gap, leading to a time-dependent drift in the electrical resistance, which hinders the development ... -
Electron localization in recrystallized models of the Ge2Sb2Te5 phase-change memory material
Konstantinou, Konstantinos; Mocanu, Felix C.; Akola, Jaakko (Peer reviewed; Journal article, 2022)Understanding the relation between the structural disorder in the atomic geometry of the recrystallized state of phase-change memory materials and the localized states in the electronic structure is necessary not only for ...