Blar i NTNU Open på forfatter "Elliott, Stephen R."
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Electric-field-induced annihilation of localized gap defect states in amorphous phase-change memory materials
Konstantinou, Konstantinos; Mocanu, Felix C.; Akola, Jaakko; Elliott, Stephen R. (Peer reviewed; Journal article, 2022)Structural relaxation of amorphous phase-change-memory materials has been attributed to defect-state annihilation from the band gap, leading to a time-dependent drift in the electrical resistance, which hinders the development ... -
Inherent electron and hole trapping in amorphous phase-change memory materials: Ge<inf>2</inf>Sb<inf>2</inf>Te<inf>5</inf>
Konstantinou, Konstantinos; Elliott, Stephen R.; Akola, Jaakko (Peer reviewed; Journal article, 2022)While the amorphous state of a chalcogenide phase-change material is formed inside an electronic-memory device via Joule heating, caused by an applied voltage pulse, it is in the presence of excess field-induced electrons ...