Exploring the Growth Dynamics of Kagome Lattice Thin Films by Molecular Beam Epitaxy

Abstract

The advancement of spintronic technologies depends on the discovery of novel materials with unique magnetic and topological properties. FeSn, a kagome lattice material with antiferromagnetic ordering, has emerged as a promising candidate for next-generation spintronic devices due to its distinctive topological features, such as coexistence of Dirac and flat bands. This thesis investigates the growth dynamics of FeSn thin films using Molecular Beam Epitaxy (MBE), focusing on the effects of substrate choice and growth parameters on the structural, morphological, and magnetic properties of the films. A combination of several characterization techniques, including Reflection High-Energy Electron Diffraction (RHEED), High-Resolution X-ray Diffraction (HR-XRD), Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), Transmission Electron Microscopy (TEM), Energy Dispersive X-ray Spectroscopy (EDS), Electron Energy Loss Spectroscopy (EELS), and Vibrating Sample Magnetometry (VSM), were employed to investigate the properties of the deposited films. A comparative analysis of three substrates—Si(111), GaAs(111), and MgO(111)—reveals that MgO(111) enables the growth of single phase epitaxial FeSn thin film. The work presented in this thesis provides insights into the role of substrate selection and growth parameter optimization to deposit epitaxial thin films of kagome lattice. It paves the way for future research on antiferromagnetic materials and their application in spintronic technologies.