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dc.contributor.authorRøst, Håkon Ivarssønn
dc.contributor.authorChellappan, Rajesh Kumar
dc.contributor.authorStrand, Frode Sneve
dc.contributor.authorGrubišić-Čabo, Antonija
dc.contributor.authorReed, Benjamen P.
dc.contributor.authorPrieto, Mauricio J.
dc.contributor.authorTǎnase, Liviu C.
dc.contributor.authorCaldas, Lucas de Souza
dc.contributor.authorWongpinij, Thipusa
dc.contributor.authorEuaruksakul, Chanan
dc.contributor.authorSchmidt, Thomas
dc.contributor.authorTadich, Anton
dc.contributor.authorCowie, Bruce
dc.contributor.authorLi, Zheshen
dc.contributor.authorCooil, Simon
dc.contributor.authorWells, Justin
dc.date.accessioned2022-04-20T08:15:26Z
dc.date.available2022-04-20T08:15:26Z
dc.date.created2021-02-10T10:42:25Z
dc.date.issued2021
dc.identifier.citationJournal of Physical Chemistry C. 2021, 125 (7), 4243-4252.en_US
dc.identifier.issn1932-7447
dc.identifier.urihttps://hdl.handle.net/11250/2991521
dc.description.abstractThe industrial realization of graphene has so far been limited by challenges related to the quality, reproducibility, and high process temperatures required to manufacture graphene on suitable substrates. We demonstrate that epitaxial graphene can be grown on transition-metal-treated 6H-SiC(0001) surfaces, with an onset of graphitization starting around 450–500 °C. From the chemical reaction between SiC and thin films of Fe or Ru, sp3 carbon is liberated from the SiC crystal and converted to sp2 carbon at the surface. The quality of the graphene is demonstrated by using angle-resolved photoemission spectroscopy and low-energy electron diffraction. Furthermore, the orientation and placement of the graphene layers relative to the SiC substrate are verified by using angle-resolved absorption spectroscopy and energy-dependent photoelectron spectroscopy, respectively. With subsequent thermal treatments to higher temperatures, a steerable diffusion of the metal layers into the bulk SiC is achieved. The result is graphene supported on magnetic silicide or optionally, directly on semiconductor, at temperatures ideal for further large-scale processing into graphene-based device structures.en_US
dc.language.isoengen_US
dc.publisherAmerican Chemical Societyen_US
dc.rightsNavngivelse 4.0 Internasjonal*
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/deed.no*
dc.subjectGrafenen_US
dc.subjectGrapheneen_US
dc.titleLow-Temperature Growth of Graphene on a Semiconductoren_US
dc.typePeer revieweden_US
dc.typeJournal articleen_US
dc.description.versionpublishedVersionen_US
dc.subject.nsiVDP::Kondenserte fasers fysikk: 436en_US
dc.subject.nsiVDP::Condensed matter physics: 436en_US
dc.source.pagenumber4243-4252en_US
dc.source.volume125en_US
dc.source.journalJournal of Physical Chemistry Cen_US
dc.source.issue7en_US
dc.identifier.doi10.1021/acs.jpcc.0c10870
dc.identifier.cristin1888391
dc.relation.projectNorges forskningsråd: 262633en_US
dc.relation.projectNorges forskningsråd: 250555en_US
dc.relation.projectNorges forskningsråd: 245963en_US
cristin.ispublishedtrue
cristin.fulltextoriginal
cristin.qualitycode1


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