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dc.contributor.authorKnörlein, Michael
dc.contributor.authorAutruffe, Antoine
dc.contributor.authorSøndenå, Rune
dc.contributor.authorDi Sabatino, Marisa
dc.date.accessioned2015-03-03T11:48:40Z
dc.date.accessioned2015-08-25T12:48:29Z
dc.date.available2015-03-03T11:48:40Z
dc.date.available2015-08-25T12:48:29Z
dc.date.issued2014
dc.identifier.citationEnergy Procedia 2014, 55:539-544nb_NO
dc.identifier.issn1876-6102
dc.identifier.urihttp://hdl.handle.net/11250/297934
dc.description.abstractThe role of iron in crystalline silicon solar cells has been extensively investigated, yet the interaction mechanisms with structural defects have not been fully understood. In this work we have investigated a multicrystalline silicon ingot made in a small scale (1.5 kg) vertical gradient freeze (VGF) furnace with the addition of 50 ppma Fe in the polysilicon feedstock. The minority carrier lifetime was qualitatively measured by photoluminescence (PL). Grain morphology and -orientation were determined by electron backscatter diffraction (EBSD). The comparison between the PL and EBSD maps shows high lifetime areas near the grain boundaries, which is explained by an internal gettering mechanism. Furthermore, it is evident that Fe segregates slightly at coincidence site lattice (CSL) boundaries – especially at Σ3, while it segregates heavily at random grain boundaries. These results indicate the dependence of Fe segregation towards defect on grain boundary character. A method to qualitatively and quantitatively identify the segregation profiles and depleted region thickness is developed by image analysis.nb_NO
dc.language.isoengnb_NO
dc.publisherElseviernb_NO
dc.titleInternal Gettering of Iron at Extended Defectsnb_NO
dc.typeJournal articlenb_NO
dc.typePeer revieweden_GB
dc.date.updated2015-03-03T11:48:40Z
dc.source.volume55nb_NO
dc.source.journalEnergy Procedianb_NO
dc.identifier.doi10.1016/j.egypro.2014.08.021
dc.identifier.cristin1219161
dc.description.localcode© 2014 The Authors. Published by Elsevier Ltd. This is an open access article under the CC BY-NC-ND license.nb_NO


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