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dc.contributor.authorHallsteinsen, Ingrid
dc.contributor.authorNord, Magnus Kristofer
dc.contributor.authorBolstad, Torstein
dc.contributor.authorVullum, Per Erik
dc.contributor.authorBoschker, Jos Emiel
dc.contributor.authorLongo, Paulo
dc.contributor.authorTakahashi, Ryota
dc.contributor.authorHolmestad, Randi
dc.contributor.authorLippmaa, Mikk
dc.contributor.authorTybell, Per Thomas Martin
dc.date.accessioned2021-09-24T11:24:10Z
dc.date.available2021-09-24T11:24:10Z
dc.date.created2016-06-15T23:54:23Z
dc.date.issued2016
dc.identifier.citationCrystal Growth & Design. 2016, 16 2357-2362.en_US
dc.identifier.issn1528-7483
dc.identifier.urihttps://hdl.handle.net/11250/2781406
dc.description.abstractIn crystalline thin film growth a prerequisite is substrate surfaces with a stable and uniform structure and chemical composition. Various substrate treatments were used to obtain atomically smooth, step-and-terrace (111)-oriented SrTiO3 with uniform cation layers at the surface, i.e., single termination. The surface control enables subsequent layer-by-layer epitaxial growth of perovskite thin films of La0.7Sr0.3MnO3, LaFeO3, and BaTiO3. Reflection high-energy electron diffraction and electron energy loss spectroscopy revealed that a single chemically intermixed (A,A′)BO3 perovskite layer formed at the interface. As the terminating layer of (111) SrTiO3 is polar, a surface reconstruction consisting of TiOx surface layers is expected, and the intermixing at the interface can be understood as A′-cations from the film material compensating an A-cation deficient substrate surface during initial growth. This finding has important consequences for engineered interfaces between perovskite thin films and polar substrate facets.en_US
dc.language.isoengen_US
dc.publisherAmerican Chemical Societyen_US
dc.titleEffect of polar (111)-oriented SrTiO3 on initial perovskite growthen_US
dc.typeJournal articleen_US
dc.description.versionsubmittedVersionen_US
dc.rights.holderThis version of the article will not be available due to copyright restrictions by American Chemical Societyen_US
dc.source.pagenumber2357-2362en_US
dc.source.volume16en_US
dc.source.journalCrystal Growth & Designen_US
dc.identifier.doi10.1021/acs.cgd.6b00143
dc.identifier.cristin1361836
dc.relation.projectNorges forskningsråd: 231290en_US
cristin.ispublishedtrue
cristin.fulltextpreprint
cristin.qualitycode2


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