• Challenges on drive circuit design for series-connected SiC power transistors 

      Peftitsis, Dimosthenis; Rabkowski, Jacek; Nee, Hans-Peter; Undeland, Tore Marvin (Journal article; Peer reviewed, 2017)
      The breakdown voltages of the currently available 1.2 and 1.7-kV classes Silicon Carbide (SiC) transistors are not sufficient to operate under medium blocking voltages. On the other hand, the fabrication yields of the ...
    • Experimental study on fast-switching series-connected SiC MOSFETs 

      Kopacz, Rafal; Peftitsis, Dimosthenis; Rabkowski, Jacek (Chapter, 2017)
      This paper presents an experimental study on series-connection of Silicon Carbide MOSFETs. The switching performance of two series-connected SiC MOSFETs rated at 1200 V and having on-state resistances of 80 mΩ was tested ...