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dc.contributor.authorSchoenherr, Peggy
dc.contributor.authorShapovalov, Konstantin
dc.contributor.authorSchaab, Jakob
dc.contributor.authorYan, Zewu
dc.contributor.authorBourret, Edith
dc.contributor.authorHentschel, Mario
dc.contributor.authorStengel, Massimiliano
dc.contributor.authorFiebig, Manfred
dc.contributor.authorCano, Andrés
dc.contributor.authorMeier, Dennis
dc.date.accessioned2020-01-14T08:14:13Z
dc.date.available2020-01-14T08:14:13Z
dc.date.created2020-01-13T14:21:32Z
dc.date.issued2019
dc.identifier.issn1530-6984
dc.identifier.urihttp://hdl.handle.net/11250/2636059
dc.description.abstractLow-temperature electrostatic force microscopy (EFM) is used to probe unconventional domain walls in the improper ferroelectric semiconductor Er0.99Ca0.01MnO3 down to cryogenic temperatures. The low-temperature EFM maps reveal pronounced electric far fields generated by partially uncompensated domain-wall bound charges. Positively and negatively charged walls display qualitatively different fields as a function of temperature, which we explain based on different screening mechanisms and the corresponding relaxation time of the mobile carriers. Our results demonstrate domain walls in improper ferroelectrics as a unique example of natural interfaces that are stable against the emergence of electrically uncompensated bound charges. The outstanding robustness of improper ferroelectric domain walls in conjunction with their electronic versatility brings us an important step closer to the development of durable and ultrasmall electronic components for next-generation nanotechnology.nb_NO
dc.language.isoengnb_NO
dc.publisherAmerican Chemical Societynb_NO
dc.titleObservation of uncompensated bound charges at improper ferroelectric domain wallsnb_NO
dc.typeJournal articlenb_NO
dc.typePeer reviewednb_NO
dc.description.versionacceptedVersionnb_NO
dc.source.journalNano letters (Print)nb_NO
dc.identifier.doihttps://doi.org/10.1021/acs.nanolett.8b04608
dc.identifier.cristin1771571
dc.description.localcodeLocked until 12.2.2020 due to copyright restrictions. This document is the Accepted Manuscript version of a Published Work that appeared in final form in [Nano letters], copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acs.nanolett.8b04608nb_NO
cristin.unitcode194,66,35,0
cristin.unitnameInstitutt for materialteknologi
cristin.ispublishedtrue
cristin.fulltextpostprint
cristin.qualitycode2


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