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dc.contributor.authorSchaab, Jakob
dc.contributor.authorSkjærvø, Sandra Helen
dc.contributor.authorKrohns, Stephan
dc.contributor.authorDai, Xiaoyu
dc.contributor.authorHoltz, Megan, E.
dc.contributor.authorCano, Andrés
dc.contributor.authorLilienblum, Martin
dc.contributor.authorYan, Zewu
dc.contributor.authorBourret, Edith
dc.contributor.authorMuller, David A.
dc.contributor.authorFiebig, Manfred
dc.contributor.authorSelbach, Sverre Magnus
dc.contributor.authorMeier, Dennis
dc.date.accessioned2019-04-25T13:38:28Z
dc.date.available2019-04-25T13:38:28Z
dc.date.created2019-01-12T20:10:27Z
dc.date.issued2018
dc.identifier.citationNature Nanotechnology. 2018, 13 (11), 1028-1034.nb_NO
dc.identifier.issn1748-3387
dc.identifier.urihttp://hdl.handle.net/11250/2595542
dc.description.abstractDomain walls in ferroelectric semiconductors show promise as multifunctional two-dimensional elements for next-generation nanotechnology. Electric fields, for example, can control the direct-current resistance and reversibly switch between insulating and conductive domain-wall states, enabling elementary electronic devices such as gates and transistors. To facilitate electrical signal processing and transformation at the domain-wall level, however, an expansion into the realm of alternating-current technology is required. Here, we demonstrate diode-like alternating-to-direct current conversion based on neutral ferroelectric domain walls in ErMnO3. By combining scanning probe and dielectric spectroscopy, we show that the rectification occurs at the tip–wall contact for frequencies at which the walls are effectively pinned. Using density functional theory, we attribute the responsible transport behaviour at the neutral walls to an accumulation of oxygen defects. The practical frequency regime and magnitude of the direct current output are controlled by the bulk conductivity, establishing electrode–wall junctions as versatile atomic-scale diodes.nb_NO
dc.language.isoengnb_NO
dc.publisherNature Researchnb_NO
dc.titleElectrical half-wave rectification at ferroelectric domain wallsnb_NO
dc.typeJournal articlenb_NO
dc.typePeer reviewednb_NO
dc.description.versionacceptedVersionnb_NO
dc.source.pagenumber1028-1034nb_NO
dc.source.volume13nb_NO
dc.source.journalNature Nanotechnologynb_NO
dc.source.issue11nb_NO
dc.identifier.doi10.1038/s41565-018-0253-5
dc.identifier.cristin1655529
dc.relation.projectNotur/NorStore: NN9264Knb_NO
dc.relation.projectNorges forskningsråd: 231430nb_NO
cristin.unitcode194,66,35,0
cristin.unitnameInstitutt for materialteknologi
cristin.ispublishedtrue
cristin.fulltextpostprint
cristin.qualitycode2


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