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dc.contributor.authorSkjærvø, Sandra Helen
dc.contributor.authorSmåbråten, Didrik Rene
dc.contributor.authorSpaldin, Nicola A
dc.contributor.authorTybell, Per Thomas Martin
dc.contributor.authorSelbach, Sverre Magnus
dc.date.accessioned2019-03-28T12:53:43Z
dc.date.available2019-03-28T12:53:43Z
dc.date.created2019-01-11T11:13:46Z
dc.date.issued2018
dc.identifier.citationPhysical Review B. 2018, 98 (18), 1-8.nb_NO
dc.identifier.issn2469-9950
dc.identifier.urihttp://hdl.handle.net/11250/2592232
dc.description.abstractWe use density functional calculations to investigate the accommodation and migration of oxygen vacancies in bulk hexagonal YMnO3, and to study interactions between neutral ferroelectric domain walls and oxygen vacancies. Our calculations show that oxygen vacancies in bulk YMnO3 are more stable in the Mn-O layers than in the Y-O layers. Migration barriers of the planar oxygen vacancies are high compared to oxygen vacancies in perovskites, and to previously reported values for oxygen interstitials in h-YMnO3. The calculated polarization decreases linearly with vacancy concentration, while the out-of-plane lattice parameter expands in agreement with previous experiments. In contrast to ferroelectric perovskites, oxygen vacancies are found to be more stable in bulk than at domain walls. The tendency of oxygen vacancies to segregate away from neutral domain walls is explained by unfavorable Y-O bond lengths caused by the local strain field at the domain walls.nb_NO
dc.language.isoengnb_NO
dc.publisherAmerican Physical Societynb_NO
dc.titleOxygen vacancies in the bulk and at neutral domain walls in hexagonal YMnO3nb_NO
dc.typeJournal articlenb_NO
dc.typePeer reviewednb_NO
dc.description.versionacceptedVersionnb_NO
dc.source.pagenumber1-8nb_NO
dc.source.volume98nb_NO
dc.source.journalPhysical Review Bnb_NO
dc.source.issue18nb_NO
dc.identifier.doi10.1103/PhysRevB.98.184102
dc.identifier.cristin1654776
dc.description.localcode©2018 American Physical Societynb_NO
cristin.unitcode194,66,35,0
cristin.unitcode194,63,35,0
cristin.unitnameInstitutt for materialteknologi
cristin.unitnameInstitutt for elektroniske systemer
cristin.ispublishedtrue
cristin.fulltextpostprint
cristin.qualitycode2


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