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dc.contributor.authorBolstad, Torstein
dc.contributor.authorKjærnes, Kristoffer
dc.contributor.authorRaa, Kristoffer S.
dc.contributor.authorTakahashi, Ryota
dc.contributor.authorLippmaa, Mikk
dc.contributor.authorTybell, Per Thomas Martin
dc.date.accessioned2019-03-15T12:37:38Z
dc.date.available2019-03-15T12:37:38Z
dc.date.created2019-03-05T13:05:13Z
dc.date.issued2019
dc.identifier.citationMaterials Research Express. 2019, 6 056409-?.nb_NO
dc.identifier.issn2053-1591
dc.identifier.urihttp://hdl.handle.net/11250/2590260
dc.description.abstractThe synthesis of (111)-oriented BaTiO3 thin films on Nb-doped SrTiO3 and bilayers of BaTiO3 and La0.7Sr0.3MnO3 on SrTiO3 are investigated. With increasing thickness the films are found to exhibit a decreasing out-of-plane lattice parameter and increased surface roughness. The BaTiO3 films on doped SrTiO3 are found to be relaxed with indications of increasing defect density with increasing thickness. Through piezoresponse force microscopy, pyroelectric measurements, and tunneling electroresistance measurements, indications of ferroelectric behavior are found in (111)-oriented BaTiO3 down to a thickness of 5 nm.nb_NO
dc.language.isoengnb_NO
dc.publisherIOP Publishingnb_NO
dc.titleSynthesis and characterization of (111)-oriented BaTiO3 thin filmsnb_NO
dc.typeJournal articlenb_NO
dc.typePeer reviewednb_NO
dc.description.versionacceptedVersionnb_NO
dc.source.pagenumber056409-?nb_NO
dc.source.volume6nb_NO
dc.source.journalMaterials Research Expressnb_NO
dc.identifier.doihttps://doi.org/10.1088/2053-1591/ab0221
dc.identifier.cristin1682372
dc.relation.projectNorges forskningsråd: 221860nb_NO
dc.relation.projectNorges forskningsråd: 231290nb_NO
dc.relation.projectNorges forskningsråd: 245963nb_NO
dc.description.localcode© 2019 IOP Publishing Ltd. This is an author-created, un-copyedited version of an article accepted for publication/published in Materials Research Express. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.1088/2053-1591/ab0221nb_NO
cristin.unitcode194,63,35,0
cristin.unitnameInstitutt for elektroniske systemer
cristin.ispublishedtrue
cristin.fulltextpostprint
cristin.qualitycode1


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