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dc.contributor.authorAbdelsalam, H.
dc.contributor.authorSaroka, Vasil
dc.contributor.authorLukyanchuk, I.
dc.contributor.authorPortnoi, M.E.
dc.date.accessioned2019-02-26T14:43:35Z
dc.date.available2019-02-26T14:43:35Z
dc.date.created2019-01-17T09:24:23Z
dc.date.issued2018
dc.identifier.citationJournal of Applied Physics. 2018, 124 (12), 124303-1-124303-9.nb_NO
dc.identifier.issn0021-8979
dc.identifier.urihttp://hdl.handle.net/11250/2587607
dc.description.abstractTriangular and hexagonal multilayer phosphorene quantum dots with armchair and zigzag terminations are investigated with the orthogonal tight-binding model. The effect of increasing the number of layers is revealed. The obtained results show that in a small size multilayer quantum dot, the edge states are as sensitive to the out-of-plane external electric fields as the edge states in a single layer dot to the in-plane external electric fields. The investigated optical absorption cross sections show that armchair phosphorene quantum dots have a regular behavior which should be useful for infrared detectors. In particular, it was found that in hexagonal armchair phosphorene dots, absorption peaks can be increased, decreased, or totally removed from the low-energy region depending on the orientation of the applied electric field. The effect of spurious doping can suppress the transitions <0.4 eV, while the effect of the finite temperature is almost negligible.nb_NO
dc.language.isoengnb_NO
dc.publisherAIP Publishingnb_NO
dc.relation.urihttps://aip.scitation.org/doi/abs/10.1063/1.5048697
dc.titleMultilayer phosphorene quantum dots in an electric field: Energy levels and optical absorptionnb_NO
dc.typeJournal articlenb_NO
dc.typePeer reviewednb_NO
dc.description.versionacceptedVersionnb_NO
dc.source.pagenumber124303-1-124303-9nb_NO
dc.source.volume124nb_NO
dc.source.journalJournal of Applied Physicsnb_NO
dc.source.issue12nb_NO
dc.identifier.doi10.1063/1.5048697
dc.identifier.cristin1658877
dc.description.localcodeThis is the authors’ accepted and refereed manuscript to the article. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Journal of Applied Physics and may be found at https://doi.org/10.1063/1.5048697nb_NO
cristin.unitcode194,66,20,0
cristin.unitnameInstitutt for fysikk
cristin.ispublishedtrue
cristin.fulltextpostprint
cristin.qualitycode1


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