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dc.contributor.authorTiwari, Subhadra
dc.contributor.authorAbuishmais, Ibrahim Abed
dc.contributor.authorLangelid, John Kåre
dc.contributor.authorLund, Richard
dc.contributor.authorMidtgård, Ole-Morten
dc.contributor.authorUndeland, Tore Marvin
dc.date.accessioned2019-02-18T12:24:55Z
dc.date.available2019-02-18T12:24:55Z
dc.date.created2018-11-24T14:36:58Z
dc.date.issued2018
dc.identifier.isbn978-9-0758-1528-3
dc.identifier.urihttp://hdl.handle.net/11250/2585927
dc.description.abstractThis paper investigates the switching phenomenon of body diodes in the state-of-the-art discrete SiC FETs. A comparative performance evaluation of the body diodes in planar and double-trench SiC MOS-FETs, and trench cascode SiC JFET is performed using standard double pulse test methodology. In addition, the switching characterization of planar discrete anti-parallel freewheeling SiC Schottky diodes is included. A series of key electrical parameters such as peak reverse recovery current, recovery time, dv/dt, and di/dt during first and second half of reverse recovery are experimentally measured in order to get an insight on the quality of these diodes.nb_NO
dc.language.isoengnb_NO
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)nb_NO
dc.relation.ispartof20th European Conference on Power Electronics and Applications 2018
dc.titleCharacterization of body diodes in the-state-of-the-art SiC FETs-Are they good enough as freewheeling diodes?nb_NO
dc.title.alternativeCharacterization of body diodes in the-state-of-the-art SiC FETs-Are they good enough as freewheeling diodes?nb_NO
dc.typeChapternb_NO
dc.description.versionsubmittedVersionnb_NO
dc.identifier.cristin1634543
dc.relation.projectNorges forskningsråd: 243711nb_NO
dc.description.localcode© 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.nb_NO
cristin.unitcode194,63,20,0
cristin.unitcode194,63,25,0
cristin.unitnameInstitutt for elkraftteknikk
cristin.unitnameInstitutt for teknisk kybernetikk
cristin.ispublishedtrue
cristin.fulltextpreprint
cristin.qualitycode1


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