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dc.contributor.authorBolstad, Torstein
dc.contributor.authorLysne, Erik Nikolai
dc.contributor.authorHallsteinsen, Ingrid
dc.contributor.authorArenholz, E
dc.contributor.authorØsterberg, Ulf Lennart
dc.contributor.authorTybell, Per Thomas Martin
dc.date.accessioned2019-02-12T08:31:19Z
dc.date.available2019-02-12T08:31:19Z
dc.date.created2018-09-27T14:54:48Z
dc.date.issued2018
dc.identifier.citationJournal of Physics: Condensed Matter. 2018, 30 (25), 1-8.nb_NO
dc.identifier.issn0953-8984
dc.identifier.urihttp://hdl.handle.net/11250/2584923
dc.description.abstractUsing strain, i.e. subtle changes in lattice constant in a thin film induced by the underlying substrate, opens up intriguing new ways to control material properties. We present a study of the effects of strain on structural and ferromagnetic properties of (1 1 1)pc-oriented La0.7Sr0.3MnO3 epitaxial thin films grown on NdGaO3, SrTiO3, and DyScO3 substrates. (The subscript pc denotes the pseudo-cubic symmetry.) The results show that La0.7Sr0.3MnO3 assumes a monoclinic unit cell on NdGaO3 and DyScO3 and a rhombohedral unit cell on SrTiO3. For La0.7Sr0.3MnO3 on NdGaO3 and DyScO3 a uniaxial magnetic anisotropy is found, while La0.7Sr0.3MnO3 on SrTiO3 is magnetically isotropic. The Néel model is used to explain the anisotropy of the thin films on NdGaO3 and SrTiO3, however, for La0.7Sr0.3MnO3 on DyScO3 the effect of octahedral rotations needs to be included through the single ion model. Through examination of the Curie temperature of the strained films we suggest that (1 1 1)-strain has a different effect on the Jahn–Teller splitting of e g and t 2g electron levels than what is seen in (0 0 1)pc-oriented La0.7Sr0.3MnO3 thin films.nb_NO
dc.language.isoengnb_NO
dc.publisherIOPnb_NO
dc.titleEffect of (111)-oriented strain on the structure and magnetic properties of La2/3Sr1/3MnO3 thin filmsnb_NO
dc.typeJournal articlenb_NO
dc.typePeer reviewednb_NO
dc.description.versionacceptedVersionnb_NO
dc.source.pagenumber1-8nb_NO
dc.source.volume30nb_NO
dc.source.journalJournal of Physics: Condensed Matternb_NO
dc.source.issue25nb_NO
dc.identifier.doi10.1088/1361-648X/aac468
dc.identifier.cristin1615104
dc.relation.projectNorges forskningsråd: 231290nb_NO
dc.description.localcodeLocked until 31.5.2019 due to copyright restrictions. This is an author-created, un-copyedited version of an article accepted for publication/published in [Journal of Physics: Condensed Matter]. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://dx.doi.org/10.1088/1361-648X/aac468nb_NO
cristin.unitcode194,63,35,0
cristin.unitcode194,66,35,0
cristin.unitnameInstitutt for elektroniske systemer
cristin.unitnameInstitutt for materialteknologi
cristin.ispublishedtrue
cristin.fulltextoriginal
cristin.fulltextpostprint
cristin.qualitycode1


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